IRF5805TRPBF-VB

IRF5805TRPBF www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.049 at VGS = - 10 V - 4.8 0.054 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET Qg (Typ.) 5.1 nC APPLICATIONS • Load Switch TSOP-6 Top V iew 1 (4) S 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 - 4.8 - 4.1 ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current V - 4.0b, c - 3.5 b, c - 20 - 2.5 IDM Pulsed Drain Current Unit IS A - 1.67b, c 3.0 2.0 PD W 2.0b, c 1.3b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, d Maximum Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 55 34 Maximum 62.5 41 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. 服务热线：400-655-8788 1 IRF5805TRPBF www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg tr td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time V nA -1 - 10 VDS ≤ - 5 V, VGS = - 10 V - 20 µA A VGS = - 10 V, ID = - 4.1 A 0.049 VGS = - 4.5 V, ID = - 1.0 A 0.054 VDS = - 15 V, ID = - 4.1 A 8 Ω S 450 VDS = - 15 V, VGS = 0 V, f = 1 MHz 80 pF 63 VDS = - 15 V, VGS = - 4.5 V, ID = - 4.1 A 10 15 5.1 8 1.8 nC 2.5 Ω f = 1 MHz 7 40 60 VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 80 120 20 30 12 20 td(on) 5 10 td(off) VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω tf Fall Time - 2.0 ± 100 tf tr Rise Time Turn-Off Delay Time - 0.5 VDS = - 30 V, VGS = 0 V td(on) Rise Time mV/°C 4.5 VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS = - 15 V, VGS = - 10 V, ID = - 4.1 A Turn-On Delay Time V - 31 13 20 20 30 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 2.5 - 20 IS = - 3.3 A IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 20 30 ns 20 30 nC 14 6 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRF5805TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 thru 5 V 4 ID - Drain Current (A) ID - Drain Current (A) 16 12 VGS = 4 V 8 4 TC = - 55 °C 3 TC = 25 °C 2 1 TC = 125 °C VGS = 3 V 0 0.0 VGS = 2 V 0.5 1.5 1.0 2.0 2.5 0 3.0 0 1 VDS - Drain-to-Source Voltage (V) 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 800 0.065 0.060 600 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 0.055 0.050 VGS = 10 V Ciss 400 200 0.045 Coss Crss 0.040 0 0 4 8 12 16 20 0 5 10 15 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.6 ID = 4.1 A VGS = 10 V, ID = 4.1 V 8 1.4 VDS = 15 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 6 VDS = 24 V 4 2 1.2 VGS = 4.5 V, ID = 4.1 A 1.0 0.8 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 IRF5805TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 100 TJ = 150 °C 10 0.20 R DS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 4.1 A TJ = 25 °C 0.15 TJ = 125 °C 0.10 0.05 TJ = 25 °C 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 25 ID = 250 µA 20 Power (W) V GS(th) (V) 2.0 1.8 1.6 15 10 1.4 1.2 - 50 5 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 100 ID - Drain Current (A) Limited by RDS(on)* 10 100 µs 1 1 ms 10 ms 100 ms 1s, 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 * VGS 10 DC 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 IRF5805TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 4 5 Power (W) ID - Drain Current (A) 3 4 3 2 2 1 1 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Foot 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 IRF5805TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 IRF5805TRPBF www.VBsemi.com TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R INCHES Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 7 Nom 服务热线：400-655-8788 7 IRF5805TRPBF www.VBsemi.com RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 服务热线：400-655-8788 8 IRF5805TRPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.