XP151A13A0MR

XP151A13AOMR N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.100Ω@-4.5V 0.150Ω@-2.5V 0.5A 3 1.GATE 2.SOURCE 3.DRAIN 1 2 General FEATURE to r 20V ●TrenchFET Power MOSFET ●Lead free product is acquired MARKING Equivalent Circuit uc ●Surface mount package 113T w nd APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter Se mi co *w：week code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current*1 ID 0.5 IDM 4.0 Continuous Source-Drain Diode Current IS 1.0 Maximum Power Dissipation PD 0.5 W R θJA 250 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 JS MI CR O Drain-Source Voltage Thermal Resistance from Junction to Ambient(t ≤5s) V A ℃ Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% www.jsmsemi.com 第１页，共６页 XP151A13AOMR N-Channel 20-V(D-S) MOSFET MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max 0.8 1.0 Units Static V(BR)DSS VGS = 0V, ID =-250µA 20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA 0.5 Gate-source leakage IGSS VDS =0V, VGS =±12V Zero gate voltage drain current IDSS VDS =16V, VGS =0V RDS(on) VGS =4.5V, ID =0.5A VGS =2.5V, ID =0.5A Forward transconductance a gfs VDS =5V, ID =0.5A b Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD=10V,ID =0.5A tr CR O Rise time Fall time VDS =10V,VGS =4.5V,ID =0.5A td(on) Turn-on delay time Turn-off delay time VDS =10V,VGS =0V,f =1MHz co Output capacitance mi Ciss Se Input capacitance nd Dynamic VGEN=4.5V,Rg=6Ω td(off) tf ±100 nA 1 µA 0.085 0.100 0.135 0.150 8.0 - uc Drain-source on-state resistance a V to r Drain-source breakdown voltage Ω S 300 120 pF 80 4.0 nC 0.65 1.6 15.0 85.0 ns 45.0 20.0 Drain-source body diode characteristics JS MI Continuous source-drain diode current Body diode voltage IS TC=25℃ VSD IS=1.0A 1.0 0.7 1.3 A V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.jsmsemi.com 第２页，共６页 XP151A13AOMR N-Channel 20-V(D-S) MOSFET Typical Electrical and Thermal Characteristics Vdd Rgen D td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% to r Vgs td(on) Rl Vin ton tr 50% 10% uc PULSE WIDTH Figure 2:Switching Waveforms nd Figure 1:Switching Test Circuit 0.39 0.13 0 CR O Se mi PD Power(W) co ID- Drain Current (A） 0.65 TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) JS MI Figure 3 Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics Figure 6 Drain-Source On-Resistance www.jsmsemi.com 第３页，共６页 to r ID- Drain Current (A) Normalized On-Resistance XP151A13AOMR N-Channel 20-V(D-S) MOSFET TJ-Junction Temperature(℃) uc Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance nd Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Se mi co C Capacitance (pF) 0.5A CR O Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) 0.5A JS MI Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs . Vsd Source-Drain Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward www.jsmsemi.com 第４页，共６页 nd Vds Drain-Source Voltage (V) uc to r ID- Drain Current (A) XP151A13AOMR N-Channel 20-V(D-S) MOSFET co mi Se CR O r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) JS MI Figure 14 Normalized Maximum Transient Thermal Impedance www.jsmsemi.com 第５页，共６页 XP151A13AOMR N-Channel 20-V(D-S) MOSFET co nd Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° mi A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Se Symbol uc to r SOT-23 Package Outline Dimensions JS MI CR O SOT-23 Suggested Pad Layout www.jsmsemi.com 第６页，共６页