WST2307
P-Ch MOSFET
Product Summery
General Description
The WST2307 is the highest performance trench
P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDSON
ID
-30V
51mΩ
-5.8A
Applications
The WST230 meet the RoHS and Green Product
requirement with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Features
z Networking DC-DC Power System
z Advanced high cell density Trench technology
SOT-23-3L Pin Configuration
z Load Switch
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
ID@TC=70℃
IDM
PD@TA=25℃
10s
Units
1
-6.3
-5.8
A
1
-4.5
-3.5
A
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Steady State
2
A
-20
3
1.32
1
W
3
0.84
0.64
W
Total Power Dissipation
PD@TA=70℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
RθJA
RθJA
RθJC
www.winsok.tw
Parameter
Thermal Resistance Junction-Ambient
1
1
Thermal Resistance Junction-Ambient (t ≤10s)
1
Thermal Resistance Junction-Case
Page 1
Typ.
Max.
Unit
---
125
℃/W
---
95
℃/W
---
80
℃/W
Rev:1.0 May.2019
WST2307
P-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
---
---
V
---
-0.023
---
V/℃
VGS=-10V , ID=-3A
---
51
52
VGS=-4.5V , ID=-2A
---
70
90
-1.2
-1.8
-2.5
V
---
4
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
---
---
±100
nA
S
VGS=VDS , ID =-250uA
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
gfs
Forward Transconductance
VDS=-5V , ID=-3A
Qg
Total Gate Charge (-4.5V)
Qgs
Gate-Source Charge
Qgd
Tf
Ciss
Unit
-30
IDSS
Td(off)
Max.
VGS=0V , ID=-250uA
VGS(th) Temperature Coefficient
Tr
Typ.
Reference to 25℃ , ID=-1mA
△VGS(th)
Td(on)
Min.
---
11
---
---
6.4
9.0
---
2.3
3.2
Gate-Drain Charge
---
1.9
2.7
Turn-On Delay Time
---
2.8
5.6
VDS=-15V , VGS=-4.5V , ID=-3A
mΩ
uA
nC
Rise Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
---
8.4
15.1
Turn-Off Delay Time
ID=-3A
---
39
78.0
---
6
12.0
---
583
816
---
100
140
---
80
112
Min.
Typ.
Max.
Unit
---
---
-2
A
---
---
-20
A
---
---
-1
V
---
11
---
nS
---
5.3
---
nC
Fall Time
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ns
pF
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
2,4
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Conditions
1,4
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-3A , dI/dt=100A/µs , TJ=25℃
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
很抱歉,暂时无法提供与“WST2307”相匹配的价格&库存,您可以联系我们找货
免费人工找货