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MMBT5401

MMBT5401

  • 厂商:

    PSI(宝力芯)

  • 封装:

    SOT23-3

  • 描述:

    晶体管类型:PNP;集射极击穿电压(Vceo):150V;集电极电流(Ic):600mA;功率(Pd):300mW;集电极截止电流(Icbo):50nA;集电极-发射极饱和电压(VCE(sat)@Ic...

  • 数据手册
  • 价格&库存
MMBT5401 数据手册
MMBT5401 GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES  High DC Current Gain  Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E    B Available in SOT-23Package Solderability: MIL-STD-202, Method 208 PB Free Products Are Available: 98.5% SN Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER MMBT5401□-T3 PACKAGE SHIPPING MARKING CODE SOT-23 Tape Reel 2L Notes: 1. □: none is for Lead Free package; “G” is for Halogen Free package. THERMAL DATA PARAMETER Thermal Resistance, Junction-to-Ambient STAD_A SYMBOL VALUES UNIT RθJA 417 °C/W PAGE.1 MMBT5401 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise specified. (Note 4) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO -150 V Collector-Base Voltage VCBO -160 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -0.6 A Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg - 55 ~ +150 °C Notes: 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS TA = 25°C, unless otherwise noted. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1mA, IB = 0 -150 V Collector-Base Breakdown Voltage V(BR)CBO IC = -100A, IE = 0 -160 V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10A, IC = 0 -5.0 V Collector Cut-off Current ICBO VCB = -120V, IE = 0 -0.05 μA Emitter Cut-off Current IEBO VEB = -3V, IC = 0 -0.05 μA hFE(1) VCE = -5V, IC = -1mA 80 hFE(2) VCE = -5V, IC = -10mA 100 200 - hFE(3) VCE = -5V, IC = -50mA 50 Collector-Emitter Saturation Voltage VCE(sat) IC = -50mA, IB = -5mA -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC = -50mA, IB = -5mA -1.0 V fT IC = -10mA, VCE = -5V, f = 100MHZ ON CHARACTERISTICS Dc Current Gain OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage STAD_A 100 MHZ PAGE.2 MMBT5401 TYPICAL PERFORMANCE CHARACTERISTICS STAD_A PAGE.3 MMBT5401 PHYSICAL DIMENSION Unit:Inch(Millimeter) SOT-23 STAD_A PAGE.4
MMBT5401 价格&库存

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