SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF3400
TF3400
N-Channel 30-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
ID
SOT-23 / SOT-23-3L
0.028Ω@ 10V
3
30V
1.GATE
5.8 A
0.033Ω@ 4.5V
2.SOURCE
0.052Ω@ 2.5V
3.DRAIN
1
General FEATURE
2
Equivalent Circuit
MARKING
●TrenchFET Power MOSFET
●Lead free product is acquired
●Surface mount package
A01TF w
APPLICATION
●Load Switch for Portable Devices
●DC/DC Converter
*w:week code
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
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A
Units
V
±12
V
ID
5.8
IDM
30
PD
1.4
W
-55 to 150
°C
TJ, TSTG
Symbol
A
Maximum
30
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
1
Typ
65
85
43
A
Max
90
125
60
Units
°C/W
°C/W
°C/W
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF3400
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
1
µA
100
nA
30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
28
mΩ
30
33
mΩ
48
52
mΩ
VGS=4.5V, ID=5.0A
gFS
Forward Transconductance
VDS=5V, ID=5.8A
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VGS=2.5V, ID=4.0A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
A
25
Static Drain-Source On-Resistance
Coss
1.0
VGS=10V, ID=5.8A
RDS(ON)
IS
V
10
15
S
0.71
823
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=5.8A
V
A
1030
pF
99
pF
77
pF
1.2
3.6
Ω
9.7
12
nC
1.6
Qgd
Gate Drain Charge
3.1
tD(on)
Turn-On DelayTime
3.3
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=3Ω
1.2
2.5
nC
nC
5
ns
4.8
7
ns
26.3
40
ns
4.1
6
ns
trr
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/µs
16
20
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
8.9
12
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : June 2005
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2
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
10V
3V
VDS=5V
16
20
4.5V
2.5V
12
ID(A)
ID (A)
15
8
10
125°C
VGS=2V
5
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
0
60
Normalized On-Resistance
RDS(ON) (mΩ )
0.5
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
1.8
50
VGS=2.5V
40
30
VGS=4.5V
20
VGS=10V
10
1.6
VGS=4.5V
1.4
VGS=10V
1.2
VGS=2.5V
1
0.8
0
5
10
15
0
20
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
60
1.0E+00
ID=5.8A
1.0E-01
50
125°C
IS (A)
RDS(ON) (mΩ )
25°C
4
40
30
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
20
1.0E-05
1.0E-06
10
0
2
4
6
8
0.0
10
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0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=15V
ID=5.8A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
1000
Ciss
800
600
400
Coss
1
Crss
200
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
TJ(Max)=150°C
TA=25°C
30
100µs
Power (W)
ID (Amps)
15
40
TJ(Max)=150°C
TA=25°C
1ms
0.1s
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
10.0 limited
5
10ms
1.0
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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4
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
TF3400
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
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5
Feb,2018
V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23-3LPlastic-Encapsulate MOSFETS
TF3400
SOT-23 -3L Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
SOT-23-3L Suggested Pad Layout
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6
Mar ,2018
V1.0