HSS2301C

HSS2301C P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2301C is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS2301C meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology VDS -20 V RDS(ON),typ 130 mΩ ID -2 A SOT23 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ ±12 V Continuous Drain Current, VGS @ -4.5V1 -2 A Continuous Drain Current, VGS @ -4.5V1 -1.4 A Current2 -8 A Dissipation3 1 W Pulsed Drain Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.1 1 Typ. Max. Unit --- 145 ℃/W --- 80 ℃/W 1 HSS2301C P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V VGS=-4.5V , ID=-2A --- 130 150 VGS=-2.5V , ID=-1A --- 170 190 VGS=VDS , ID =-250uA -0.3 -0.65 -1.0 VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 m V uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-1A --- 5 --- S Qg Total Gate Charge (-4.5V) --- 4.3 --- Qgs Gate-Source Charge --- 0.7 --- Qgd Gate-Drain Charge --- 1 --- VDS=-10V , VGS=-4.5V , ID=-2A nC --- 12 --- Rise Time VDD=-10V , VGS=-4.5V , RG=3.3 --- 20 --- Turn-Off Delay Time ID=-2A --- 23 --- Fall Time --- 9 --- Ciss Input Capacitance --- 270 --- Coss Output Capacitance --- 54 --- Crss Reverse Transfer Capacitance --- 44 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current1,4 VG=VD=0V , Force Current --- --- -2 A Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.1 2 HSS2301C P-Ch 20V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.1 3 HSS2301C P-Ch 20V Fast Switching MOSFETs www.hs-semi.cn Ver 2.1 4 HSS2301C P-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSS2301C www.hs-semi.cn Package code SOT-23 Ver 2.1 Packaging 3000/Tape&Reel 5