KY2304

ShenZhen HanKingYuan Electronic Co.,Ltd KY2304 30V N-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 39mΩ (31mΩ Typ.) @VGS=10V ● RDS(ON) ≤ 52mΩ (41mΩ Typ.) @VGS=4.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS ● Load/Power Switching ● Interfacing Switching N-CHANNEL MOSFET MARKING 2304 2304 :Device Code MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Ta = 25℃ 4.0 A Ta= 100℃ 2.6 A 16 A 1.0 W 125 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current PD Power Dissipation RθJA TJ, TSTG note1 Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range www.scr-ky.com Ta = 25℃ 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2304 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Parameter Symbol bol Test Condition Min. Typ. Max. Units 30 - - V - - 1 μA - - ±100 nA 1.0 1.4 2.2 V VGS =10V, ID =4A - 31 39 On-Resistance note2 VGS =4.5V, ID =3A - 41 52 Forwar d r T ansconductance VDS =4.5V, ID =2.5A - - 52 S - 231 - pF - 42 - pF - 17 - pF - - nC - 4.1 0.74 - nC - 0.66 - nC - 11 - ns - 48 - ns - 12 - ns - 19 - ns Maximum Continuous Drain to Source Diode Forward Current - - 4 A Maximum Pulsed Drain to Source Diode Forward Current - - 16 A - - 1.2 V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0V,ID = 250μA VDS = 30V, VGS = 0V, TJ = 25℃ VGS = ±20V,VDS = 0V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) gFS Static Drain-Source VDS =VGS,ID = 250μA mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =15V, VGS = 0V, f = 1.0MHz VDS=15V, ID=3A, VGS=4.5V, Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VGS = 4.5V, VDS=15V, RG =3Ω, ID=3A Turn-Off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD=2.7A, TJ = 25℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2 . Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd Typical Performance Characteristics Figure1. Output Characteristics KY2304 Figure2. Transfer Characteristics Figure3. Rdson-Drain Current Figure4. Typical Source-Drain Diode Forward Voltage Figure5. Capacitance Characteristics Figure6. Gate Charge www.scr-ky.com 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd Typical Performance Characteristics (cont.) Figure8. Normalized on Resistance vs. Temperature Figure7. Normalized Breakdown Voltage vs. Temperature Figure9. Safe Operation Area KY2304 Figure10. Drain Current vs. Ambient Temperature Figure11. Transient Thermal Response Curve www.scr-ky.com 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2304 SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.079 0.022 REF 0.020 8° 5／5