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KY3400

KY3400

  • 厂商:

    KY(韩景元)

  • 封装:

    SOT-23

  • 描述:

    类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.8A;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):21mΩ@10V,5A;

  • 数据手册
  • 价格&库存
KY3400 数据手册
ShenZhen HanKingYuan Electronic Co.,Ltd KY3400 30V N-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 33mΩ( 21mΩ Typ.) @VGS=10V ● RDS(ON) ≤ 39mΩ( 25mΩ Typ.) @VGS=4.5V 1. GATE ● RDS(ON) ≤ 60mΩ( 36mΩ Typ.) @VGS=2.5V 3. DRAIN 2. SOURCE APPLICATIONS ● Load/Power Switching ● Interfacing Switching MARKING N-CHANNEL MOSFET 3400 Other mark: "R0" MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current 5.8 A IDM PD Pulsed Drain Current Power Dissipation 30 0.35 A W RθJA Thermal Resistance, Junction to Ambient ℃/W ℃ note1 TJ Operating and Storage Temperature Range 357 150 TSTG Operating and Storage Temperature Range -55 to +150 www.scr-ky.com ℃ 1/5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3400 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Symbol bol Parameter Test Condition Min. Typ. Max. Units 30 31.5 - V - - 1 μA - - ±100 nA VDS =VGS,ID = 250μA 0.7 1 1.4 V VGS =10V, ID =5A VGS =4.5V, ID =4A - 21 25 33 39 mΩ VGS =2.5V, ID =3A - 36 60 - - 1155 pF - 108 - pF - pF - 84 10 - nC - 1.6 - nC - 3.1 - nC - - 5 ns - - 7 ns - 40 6 ns - - - 0.8 1 V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0V,ID = 250μA VDS = 30V, VGS = 0V, TJ = 25℃ VGS = ±12V,VDS = 0V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance note2 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =15V, VGS = 0V, f = 1.0MHz VDS=15V, ID=5.8A, VGS=4.5V, f=1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VGS = 10V, VDS=15V, RL =2.7Ω, RGEN=3Ω Turn-Off Fall Time ns Drain-Source Diode Characteristics and Maximum Ratings VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD=1A, TJ = 25℃ Notes: 1. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. 2. Guaranteed by design, not subject to productiontesting. www.scr-ky.com 2/5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3400 TYPICAL PERFORMANCE CHARACTERISTICS www.scr-ky.com 3/5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3400 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) www.scr-ky.com 4/5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3400 SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP 1.800 L 2.000 0.071 0.550 REF 0.079 0.022 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.100 0.037 TYP 0.020 8° 5/5
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