NP2300MR-Y-G

NP2300MR-Y N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2300MR-Y uses advanced trench technology to provide excellent R DS(ON) , low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features S  V DS =20V，I D =5A R DS(ON) (Typ.)=30mΩ @V GS =2.5V R DS(ON) (Typ.)=24mΩ @V GS =4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 Application   NP2300 PWM applications Load switch Package  SOT-23-3L 1 2 G S Ordering Information Part Number Storage Temperature Package Devices Per Reel NP2300MR-Y-G -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS 20 V Gate-source voltage V GS ±12 V T A =25℃ Continuous Drain Current T A =70℃ ID 5 4 A Pulsed Drain CurrentC I DM 25 A Drain-source Diode forward current Is 2 A T A =25℃ Maximum power dissipation T A =70℃ Operating junction Temperature range Rev.1.0 —Jan.8.2018 PD Tj 1 1.4 0.9 -55—150 W ℃ www.natlinear.com NP2300MR-Y Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =250µA 20 - - V Zero gate voltage drain current I DSS V DS =20V, V GS =0V - - 1 µA Gate-body leakage I GSS V DS =0V, V GS =±12V - - ±100 nA 0.45 0.66 1.3 V - 24 30 30 36 - 10 - - 525 - - 95 - - 75 - - 3 - - 7.5 - - 20 - - 6 - - 12.5 - - 1 - - 2 - - 0.76 1.16 ON Characteristics Gate threshold voltage V GS(th) Drain-source on-state resistance R DS(ON) Forward transconductance V DS =V GS , I D =250µA gfs V GS =4.5V, I D =5A V GS =2.5V, I D =3A V GS =5V, I D =4A mΩ S Dynamic Characteristics Input capacitance C ISS Output capacitance C OSS Reverse transfer capacitance C RSS V DS =8V ,V GS =0V f=1.0MHz pF Switching Characteristics Turn-on delay time t D(ON) Rise time V DS =10V I D =1A V GS =4V R GEN =10ohm tr Turn-off delay time t D(OFF) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd V DS =10V,I D =4A V GS =4.5V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage V SD V GS =0V,Is=1A V Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead Symbol t≤ 10s Steady-State Steady-State R θJA R θJL Typ. Max. 70 90 100 125 62 80 2 Unit ℃/W A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on T J(MAX) =150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by jun Rev.1.0 —Jan.8.2018 2 www.natlinear.com NP2300MR-Y Package Information  SOT-23-3L θ D b E E1 L 0.2 e c Symbol Dimensions In Millimeters A A2 A1 e1 Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Rev.1.0 —Jan.8.2018 3 www.natlinear.com