UMW MMBT4401

UMW R MMBT4401 UMW MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES z Switching Transistor SOT-23 MARKING:2X 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 V Collector cut-off current ICEO VCE=30V, IB=0 100 nA Collector cut-off current ICBO VCB= 50V, IE=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA DC current gain hFE VCE=1V, IC=150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V Collector-emitter saturation voltage VBE(sat) IC=150mA, IB=15mA 0.95 V Transition frequency fT VCE=10V,IC=20mA, f=100MHz Delay time td VCC=30V, VBE(off)=-2V IC=150mA, 15 ns Rise time tr IB1=15mA 20 ns Storage time ts 225 ns Fall time tf 30 ns www.umw-ic.com VCC=30V, IC=150mA, IB1= IB2=15mA 1 250 MHz 友台半导体有限公司 UMW R UMW MMBT4401 SOT-23 Plastic-Encapsulate Transistors Static Characteristic DC CURRENT GAIN IC 0.8mA 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 IC Ta=100℃ 0.9mA 150 —— COMMON EMITTER VCE= 1V 1mA hFE (mA) COMMON EMITTER Ta=25℃ 200 COLLECTOR CURRENT hFE 1000 250 Ta=25℃ 100 0.2mA IB=0.1mA 0 10 0 1 2 3 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 4 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC 600 100 (mA) IC β=10 β=10 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.5 0.1 600 1 10 COLLECTOR CURREMT (mA) VBE fT 500 600 (mA) IC Ta=25℃ TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT 100 —— 600 100 IC COMMON EMITTER VCE=10V (MHz) COMMON EMITTER VCE=1V (mA) 10 COLLECTOR CURRENT VCE (V) 1 0.1 0 200 400 600 800 1000 100 10 1200 10 Cob/Cib 100 —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ Cib C (pF) PC 400 f=1MHz IE=0/IC=0 CAPACITANCE 20 30 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 Cob —— IC 40 (mA) Ta 300 200 100 0 1 0.1 1 REVERSE VOLTAGE www.umw-ic.com 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW MMBT4401 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司