HD1H15A

100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET Features Applications  VDSS=100V／VGSS=±20V／ID=15A RDS(ON)=105mΩ(Max.)@VGS=10V RDS(ON)=175mΩ(Max.)@VGS=4.5V  ESD protect  Reliable and Rugged  High Density Cell Design For Ultra Low On-Resistance   HD1H15A Synchronous Rectification Power Management in Inverter System TO-252 TO-251 Chip Diagram HD1H15A 1.Gate 2. Drain 3. Source Physical Characteristics Switching Time Test Circuit and Waveforms  Wafer Diameter 8 inches (± 0.1 inche)  Wafer Thickness: 8mils (±0.6 mil)  Die size: 1700μm x 1240μm (Including scribe line)  Scribe Line Width: 60um  Gross die: 12,549  Metalization: Frontside: Al/Si/Cu Backside: Ti/Ni/Ag  Metal thickness: Front-side: 4.0μm Back0side: 1.4μm  Bonding Area: Gate: 300μm x 430μm (Die edge to gate metal 34μm) Source: Full metalized surface of source region (Die edge to source metal 51μm)  Recommended wire bonding: Gate:1.5mils Au wire x 1 Source: 12mils Al wire x 1  Recommended package: SOP-8(Dual) Rev. A.0 – Feb., 2012 1 100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET HD1H15A Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS ID1 IDM1 IS1 TJ TSTG Parameter Drain-Source Voltage Gate –Source Voltage TC=70°C Continuous Drain Current TC=25°C 300us Pulsed Drain Current Tested Diode Continuous Forward Current Operating Junction Temperature Storage Temperature Range Typical 100 ±20 2.8 3.5 14 3 150 -55 ~ 150 Unit V V A A A A °C °C Note: 1: Surface Mounted on 1in2 pad area, t ≦ 10sec.. 2: UIS tested and pluse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C). Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA 100 VDS=80V,VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 1.5 IGSS Gate Leakage Current VGS=±16V, VDS=0V VGS=10V, ID=3.5A RDS(on)1 Drain-Source On-Resistance VGS=4.5V, ID=2A Diode Characteristics VSD1 Diode Forward Voltage ISD=3A,VGS=0V 0.6 trr Reverse Recovery Time ISD=15A, dISD/dt=100A/us Qrr Reverse Recovery Charge 2 Dynamic Characteristics Ciss Input Capacitance VGS=0V, VDS=30V Coss Output Capacitance Frequency=1MHz Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time VDD=30V, RL=30Ω tr Turn-On Rise Time ID=1A, VGEN=10V td(off) Turn-Off Delay Time RG=6Ω tf Turn-Off Fall Time Gate Charge Characteristics2 Qg Total Gate Charge VDS=50V, VGS=10V Qgs Gate-Source Charge ID=15A Qgd Gate-Drain Charge Note: 1: Pulse test ; pulse width ≦ 300ns, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. Rev. A.0 – Feb., 2012 2 Typ Max. Unit V 2 85 135 0.8 36 50 900 60 40 8 6 40 24 20 3 3.1 1 30 2.5 ±10 105 175 1.1 uA V uA mΩ V ns nC pF 15 11 75 45 ns nC 100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET Typical Characteristics Rev. A.0 – Feb., 2012 3 HD1H15A 100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET Typical Characteristics (Cont.) Rev. A.0 – Feb., 2012 4 HD1H15A 100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET Typical Characteristics (Cont.) Rev. A.0 – Feb., 2012 5 HD1H15A Package Dimension TO TO-252 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 2.3typ 2 3typ 2.3typ 0.5+0.1 -0.05 Package Dimension TO TO-252 Package Dimension TO TO-251 6.6±0.2 2.3±0.1 0.8±0.15 0.6±0.1 2.3typ 2 3typ 2.3typ 7.8±0 ±0.4 ± 0.3 7.5 0.75±0.15 7±0.2 0.5±0.05 5.6±0.2 5.35±0.15 0.5+0.1 -0.05 1.2±0.3