HD830U

BVDSS = 550 V RDS(on) typ = 1.1 Ω HD830U / HU830U ID = 5.0 A 550V N-Channel MOSFET TO-252 TO-251 FEATURES  Originative New Design HD830U  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HU830U 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.1 Ω (Typ.) @VGS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 550 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 5.0 A Drain Current – Continuous (TC = 100℃) 2.9 A IDM Drain Current – Pulsed 18 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 7.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25℃) * 3.13 W Power Dissipation (TC = 25℃) - Derate above 25℃ 38 W 0.3 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 3.0 RθJA Junction-to-Ambient* -- 38 RθJA Junction-to-Ambient -- 60 * When mounted on the minimum pad size recommended (PCB Mount) Units ℃/W HD830U_HU830U June 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5 A -- 1.1 1.3 Ω VGS = 0 V, ID = 250 ㎂ 550 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.5 -- V/℃ VDS = 550 V, VGS = 0 V -- -- 1 ㎂ VDS = 400 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 750 840 ㎊ -- 86 111 ㎊ -- 11.5 15 ㎊ -- 12 35 ㎱ -- 46 100 ㎱ -- 50 120 ㎱ -- 48 105 ㎱ -- 15.5 20 nC -- 2.9 -- nC -- 6.4 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 250 V, ID = 5.0 A, RG = 25 Ω (Note 4,5) VDS = 400V, ID = 5.0 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 5.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 20 VSD Source-Drain Diode Forward Voltage IS = 5.0 A, VGS = 0 V -- -- 2 V trr Reverse Recovery Time -- 263 -- ㎱ Qrr Reverse Recovery Charge IS = 5.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.9 -- μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=21.5mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤5.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature A HD830U_HU830U Electrical Characteristics TC=25 °C HD830U_HU830U ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage[V] VDS, Drain-Source Voltage[V] Figure 1. On Region Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] Figure 2. Transfer Characteristics ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pF] VGS, Gate-Source Voltage [V] 12 VDS = 100V VDS = 250V 10 VDS = 400V 8 6 4 2 ∗ Note : ID = 5.0A 0 0 4 8 12 16 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 20 Typical Characteristics HD830U_HU830U (continued) RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 2.5 2.0 1.5 1.0 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 2.5 A 0.0 -100 -50 ID, Drain Current [A] * Notes : 1. TC = 25 oC 101 102 3 2 0 25 103 50 Figure 9. Maximum Safe Operating Area D=0.5 0.2 * Notes : 1. ZθJC(t) = 1.71 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.05 0.02 0.01 single pulse PDM -2 10 10-5 100 t1 10-4 125 Figure 10. Maximum Drain Current vs Case Temperature 0.1 10-1 75 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] 100 200 1 2. TJ = 150 oC 3. Single Pulse ZθJC(t), Thermal Response ID, Drain Current [A] 1 ms 10 ms 100 ms DC 10-2 100 150 4 100 µs 101 10-1 100 5 Operation in This Area is Limited by R DS(on) 100 50 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 102 0 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] 10-3 10-2 10-1 t2 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 101 150 HD830U_HU830U Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT 200nF Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HD830U_HU830U Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD HD830U_HU830U Package Dimension TO TO-252 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 2.3typ 2 3typ 2.3typ 0.5+0.1 -0.05 HD830U_HU830U Package Dimension TO TO-251 6.6±0.2 2.3±0.1 0.8±0.15 0.6±0.1 2.3typ 2 3typ 2.3typ 7.8±0 ±0.4 ± 0.3 7.5 0.75±0.15 7±0.2 0.5±0.05 5.6±0.2 5.35±0.15 0.5+0.1 -0.05 1.2±0.3