PTY88N07

PTP88N07/PTY88N07 65V/88A N-Chnnel MOSFET Features  D 65V/88A RDS(ON)=7.0mŸ @ VGS=10V ◀  Lead free and Green Device Available  Low Rds-on to Minimize Conductive Loss  High avalanche Current  100% Avalanche Tested G S D Application  Power Supply  DC-DC Converters  UPS  Battery Manageme ent System G TO-220 S TO-263 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol S VDSS VGSS ID3 IDP4 EAS5 PD TJ, TSTG Parame eter D Drain-to-Source Voltag ge G Gate-to-Sou urce Voltage e C Continuous Drain Curre ent P Pulsed Drain Current A Avalanche energy e M Maximum Power P Dissip pation JJunction & Storage S Tem mperature R Range TC=25°C C TC=100°°C TC=25°C C TC=25°C C Maximum m Unitt 65 ±25 88 70 352 288 174 -55~175 V V mJ W °C Typical Unit 0.72 62.5 ℃/W A Thermal Characteristics Symbol Rθ jc Rθja Parameter Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient - 1- 2018-6-12 PTP88N07/PTY88N07 65V/88A N-Chnnel MOSFET Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(on)1 Gate Threshold Voltage Gate Leakage Current Drain-Source On-Resistance Test Conditions Min. Typ Max. Unit VGS=0V,ID=250uA VDS=65V,VGS=0V TJ=125°C VDS=VGS,ID=250uA 65 — — 2 — — — 3 — 1 100 4 VGS=±25V, VDS=0V VGS=10V, ID=40A — — — — 7 — ±100 7.8 — ISD=40A,VGS=0V — — — — — — 50 90 1.3 — — — — — — — 3000 430 250 17 15 62 32 — — — — — — — — — — 76 14 25 — — — V uA V nA mΩ Diode Characteristics VSD1 IS3 trr Qrr Diode Forward Voltage Diode Continuous Forward Current Reverse Recovery Time Reverse Recovery Charge Dynamic Characteristics2 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Gate Charge Characteristics2 Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge IF=40A, dI/dt=100A/us VGS=0V, VDS=30V Frequency=1MHz VDD=30V,ID=40A, VGS=10V,RG=6Ω VDS=30V,VGS=10V ID=40A 80 — — V A nS nC pF nS nC Note: 1: Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. 3: Package limitation current is 55A.Calculated continuous current based on maximum allowable junction temperature. 4: Repetitive rating, pulse width limited by max junction temperature. 5: Starting TJ = 25°C,L = 1mH,IAS = 24A. - 2- 2018-6-12 PTP88N07/PTY88N07 65V/88A N-Chnnel MOSFET Typical Operating Characteristics - 3- 2018-6-12 PTP88N07/PTY88N07 65V/88A N-Chnnel MOSFET Typical Operating Characteristics - 4- 2018-6-12 PTP88N07/PTY88N07 65V/88A N-Chnnel MOSFET Typical Operating Characteristics - 5- 2018-6-12 PTP88N07/PTY88N07 65V/88A N-Chnnel MOSFET Test Circuit 1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit - 6- 2018-6-12