SE80130G

SE80130G N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline Surface Mount Device  Features For a single MOSFET   VDS = 80V RDS(ON) =3.6mΩ @ VGS=10V Pin configurations See Diagram below TO-263 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed Single Pulse Avalanche Energy Total Power Dissipation @TC=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 130 320 A EAS 784 mJ PD 160 W TJ -55 to 175 ℃ 1. SE80130G Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=85V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=60A - Forward Transconductance VDS=10V, ID=60A 40 gFS 80 V 2.5 3.6 1 μA 100 nA 4.5 V 4.3 mΩ S DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=40V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 5500 pF 830 pF 57 pF 55 nC 21 nC 9 nC 13.5 ns 38 ns 12.5 ns 13.5 ns SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=40V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=40V, td(off) Turn-Off Delay Time RGEN=4.7Ω td(r) Turn-On Rise Time ID=60A td(f) Turn-Off Fall Time ID=60A Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case(t≤10s) ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 0.42 ℃/W 2. SE80130G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE80130G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE80130G Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE80130G Package Outline Dimension TO-263 ShangHai Sino-IC Microelectronic Co., Ltd. 6. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.