SL05N06A

SL05N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 60V 5.0A ＜100 mohm ＜120 mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current ID 5.0 A Pulsed Drain Current A IDM 12 A Total Power Dissipation @ TC=25℃ PD 1.2 W RθJA 105 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient B Junction and Storage Temperature Range www.slkormicro.com 1 Unit SL05N06A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA IGSS1 VGS= ±20V, VDS=0V ±100 nA IGSS2 VGS= ±10V, VDS=0V ±50 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.7 2.5 V VGS= 10V, ID=3A 65 100 Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=1.5A 78 120 IS=3.0A,VGS=0V 0.8 1.2 V 3.0 A Static Parameter V Gate-Body Leakage Current Diode Forward Voltage Maximum Body-Diode Continuous Current 1.0 mΩ VSD IS Dynamic Parameters Input Capacitance Ciss 330 Output Capacitance Coss Reverse Transfer Capacitance Crss 17 Total Gate Charge Qg 5.1 Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.7 Turn-on Delay Time tD(on) 13 Turn-on Rise Time tr VDS=30V,VGS=0V,f=1MHZ 90 pF Switching Parameters VGS=10V,VDS=30V,ID=3.0A 1.3 51 VGS=10V,VDD=30V, ID=1.5A,RL=1Ω RGEN=3Ω Turn-off Delay Time Turn-off fall Time A. B. ns tD(off) 19 tf 12 Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. www.slkormicro.com nC 2 SL05N06A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance www.slkormicro.com Figure6. Drain-Source on Resistance 3 SL05N06A Figure7. Safe Operation Area www.slkormicro.com Figure8. Switching wave 4 SL05N06A ■ SOT-223 Package information Symbol A A1 A2 b b1 c D E E1 e L θ ■ SOT-223 Suggested Pad Layout www.slkormicro.com 5 Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10°