WSF30150A

WSF30150A N-Ch MOSFET General Description Product Summery The WSF30150A is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 2.2mΩ 145A Applications The WSF30150A meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Power Tool Application Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline TO-252 Pin Configuration 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1,7 145 A 1,7 75 A 310 A 372 mJ 86 A 78 W Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 2 Pulsed Drain Current EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 4 PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 55 --- 1.6 ℃/W ℃/W Rev 1: May.2021 WSF30150A N-Ch MOSFET Electrical Characteristics (TJ=25°C, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) = VGS=0V , ID 250uA Typ. Max. Unit --- --- V --- 0.022 --- V/℃ VGS=10V , ID=20A --- 2.2 3.5 VGS=4.5V , ID=15A --- 3.1 4.2 1.2 1.6 2.5 V --- -6.1 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 2 VDS=24V , VGS=0V , TJ=55℃ --- --- 10 VGS=VDS , ID =250uA VGS(th) Temperature Coefficient Min. 30 mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forwar Trd VDS=5V , ID=15A --- 32 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.1 2.5 Ω Qg Total Gate Charge (4.5V) --- 22 --- --- 4.3 --- --- 8.3 --- Qgs Qgd ansconductance VDS=15V , VGS=4.5V , ID=20A Gate-Source Charge Gate-Drain Charge Td(on) Turn-On Delay Time --- 16 --- Tr Rise Time Rise Time VDD=15V , VGEN=10V , RG=6Ω, --- 11 --- Td(off) Turn-Off Delay Time ID=1A, RL=15Ω. --- 35 --- nC ns Tf Turn-Off Fall Time --- 40 --- Ciss Input Capacitance --- 2450 --- Coss Output Capacitance --- 590 --- Crss Reverse Transfer Capacitance --- 245 --- Min. Typ. Max. Unit 85 --- --- mJ Min. VDS=15V , VGS=0V , f=1MHz pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current Pulsed Source Current2,6 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ Typ. Max. Unit --- --- 50 A --- --- 310 A --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t