XBG6158J2SZR

XBG6158 ZR Series One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION  The XBG6158 ZR Series product is a high integration solution for lithium-ion/polym -er battery protection. XBG6158 ZR Series contains advanced power MOSFET, highaccuracy voltage detection circuits and del -ay circuits. XBG6158 ZR Series is put into an ultra-small DFN2X2-6 package and only one external component makes it an ideal solution in limited space of battery pack. XBG6158 ZR Series has all the protectio -n functions required in the battery applicati on including overcharging, overdischarging, overcurrent and load short circuiting prot -ection etc. The accurate overcharging detection voltage ensures safe and full utilizati -on charging. The low standby current drains little current from the cell while in storag -e. The device is not only targeted for digital cellular phones, but also for any other Li-Io -n and Li-Poly battery-powered information appliances requiring long-term battery life.            APPLICATIONS One-Cell Lithium-ion Battery Pack Lithium-Polymer Battery Pack FEATURES   Integrate Advanced Power MOSFET with Equivalent of 22mΩ RDS(ON) Ultra-small DFN2x2-6Package Over-temperature Protection Overcharge Current Protection Two-step Overcurrent Detection: -Over-discharge Current -Load Short Circuiting Charger Detection Function or < forbidden >. Vbat need to be tested with a battery simulator; i -f there is no battery simulator, replace the battery s -imulator with power and load. Load Short-circuiting condition If voltage of VM pin is equal or below short circuiting protection voltage (VSHORT), the XBG6158 ZR Series will stop discharging and battery is disconnected from load. The maximum delay time to switch current off is tSHORT. This status is released when vo -ltage of VM pin is higher than short protec -tion voltage (VSHORT), such as when disco -nnecting the load. R1 VM Delay Circuits + - The detection delay time for overdischarg -e current 2 and load short-circuiting starts when overdischarge current 1 is detected. As soon as overdischarge current 2 or load short-circuiting is detected over detection delay time for overdischarge current 2 or lo -ad short- circuiting, the XBG6158 ZR Seri- C1 VM GND VM VT + - Figure 4 -7Suzhou XySemi Electronic Technology Co., Limited. VDD www.xysemi.com.cn Rev0.8 XBG6158 ZR Series TIMING CHART 1. Overcharge and Overdischarge voltage detection CU CU HC Battery voltage DL DH DL Internal Drive Signal VM ov1 SS Charger connection Load connection (1) (2) (1) (3) (1) Figure5-1 Overcharge and Overdischarge Voltage Detection Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition 2. Overdischarge Current and Load Short detection VCU VCU-VHC Battery voltage VDL+VDH VDL ON Internal Drive Signal OFF VDD VSHORT VM Vov1 VSS Charger connection Load connection tIOV1 (1) tSHORT (2) (1) (3) (1) Figure5-2 Overdischarge Current and Short Detection Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition -8Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.8 XBG6158 ZR Series 3. Abnormal Charger Detection VCU VCU-VHC Battery voltage VDL+VDH VDL ON Internal Drive Signal OFF VDD VM VSS VCHA Charger connection Load connection tchoc tDL (1) (2) (3) Figure5-3 Abnormal Charger Detection Remark: (1) Normal condition (2) Overdischarge voltage condition (3) Overcharge voltage condition -9Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.8 XBG6158 ZR Series TYPICAL APPLICATION As shown in Figure 6, the current path which must be kept as short as possible. For thermal management, ensure that these trace widths are adequate. C1 is a decoupling capacitor which should be placed as close as possible to XBG6158 ZR Series. If add one 0.1uF capacitor between VM pin and GND pin closely, the system ESD level and anti-interference capability of circuit will improve greatly. R1 1KΩ CHARGER+ VDD 1 6 VM GND 2 5 VM VT 3 4 VM BAT+ C1 0.1uF BAT- EPAD C2 0.1uF CHARGER- Figure 6 XBG6158 ZR SERIES in a Typical Battery Protection Circuit Symbol Typ Value range Unit R1 1 - KΩ C1 0.1 0.1~2.2 μF Remark: 1.The above parameters may be changed without notice; 2.The schematic diagram and parameters of the IC are not used as the basis to ensure the operation of the circuit. Please conduct full measurement on the actual application circuit before setting the parameters. 3.If the resistance value is large , the overcharging voltage will be correspondingly larger by several mV. Precautions • Pay attention to the operating conditions for input/output voltage and load current so that the power loss in XBG6158 ZR series does not exceed the power dissipation of the package. • Do not apply an electrostatic discharge to this XBG6158 ZR series that exceeds the performance ratings of the built-in electrostatic protection circuit. - 10 Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.8 XBG6158 ZR Series APPLIED MEASUREMENT METHOD (1).Overcharge characteristic test method: a. According to the figure7-1, connect the power supply DC1 to the B + and GND pins of the system board and set the voltage to about 3.6V. Connect the power supply from GND to VM to DC2 power supply and set 100mV current limiting 10mA. Observe the waveform. b. Adjust the power supply voltage V1 and increase it by 0.001V until the output level of VM pin c hanges from 0 to negative (-100mV). Record the overcharge protection voltage and measure the pr otection delay. c. Adjust the power supply voltage V1 to decrease by 0.001V until the output voltage of VM pin is recovered from negative (-100mV) to 0 level, and record the overcharge recovery voltage. (2).Over discharge characteristic test method: a. According to the figure7-2, connect the power supply DC1 to the B + and GND pins of the system board and set the voltage to about 3.6V. Connect the DC2 power supply from VM to GND, set the 100mV current limiting 10mA, and observe the waveform. b. Adjust the power supply voltage V1 and increase it by 0.001V until the output level of VM pin c hanges from 0 to positive (100mV). Record the overcharge protection voltage and measure the p rotection delay. c. Adjust the power supply voltage V1 to decrease by 0.001 V until the output voltage of VM pin is restored from positive (100 mV) to 0 level, and record the overcharge recovery voltage. (3).Discharge over current test method: a. According to the figure7-3, connect the DC1 power supply to the B + and GND pins of the system board and set the voltage to about 3.0V/3.6V/4.2V. Connect the electronic load from B + to VM and observe the waveform. b. Adjust the electronic load increase it by 0.1A step, detect that the current from B + to VM is turned off and meet the delay standard (about 10ms), and record the discharge delay time. (4).Charging over current test method: a. According to the figure7-4, connect the DC1 power supply to the B + and GND pins of the system board and set the voltage to about 3.0V/3.6V/4.2V, and load DC2 power supply from GND to VM. b. Adjust the current limiting value of DC2 power supply to increase by 0.1A step, detect that the current from GND to VM is turned off and meet the delay standard(about 10ms), and record the charging over-current delay time. (5).Iq test method: a. As shown in the figure7-5, connect the positive pole of DC1 to B +, and the negative pole to GND, and set the voltage to 3.6V; b. VM grounding, record the current passing through DC1 (Iq). (6).Isd test method: a. As shown in the figure7-6, connect the positive pole of DC1 to B + and the negative pole to GND, and set the voltage to 2V; b. VM is suspended and the current passing through DC1 is recorded as Isd. - 11 Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.8 XBG6158 ZR Series SCHEMATIC DIAGRAM OF TEST METHOD VDD VDD DC1 GND VM DC1 VT DC2 Figure7-2 EL VDD VDD DC1 GND GND VM VM VT VT DC1 VM VT DC2 Figure7-1 DC1 GND DC2 Figure7-3 Figure7-4 VDD VDD GND VM DC1 GND VM VT VT Figure7-5 Figure7-6 - 12 Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.8 XBG6158 ZR Series Solderability Curve of Lead-Free Reflow Soldering (applicable to SMT tube) IR REFLOW PROFILE 350 Temperature (℃) 300 245±5℃ 5±0.5 sec 250 200 150 60~90 sec 100 50 0 0 23 40 60 80 100 120 140 160 180 200 220 240 260 280 Time (sec) Explain: 1.Preheating temperature 25~150℃, duration 60~90sec; 2.Peak temperature 245 ± 5 ℃, duration 5 ± 0.5sec; 3.Cooling rate of welding process is 2~10℃/sec. Resistance to welding heat conditions Temperature: 270±5℃; Time:10±1sec - 13 Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.8 XBG6158 ZR Series PACKAGE OUTLINE(DFN2x2-6) E2 D b D2 e A3 A E L A1 SIDE VIEW TOP VIEW BOTTOM VIEW 1.8 PACKAGE TYPE SYMBOLS MIN A A1 NOM MAX 0.020 0.050 b 0.25 0.3 0.35 D 1.924 2.0 2.076 E 1.924 2.0 2.076 e 0.25 0.65 0.7 0.6 1.2 0.20REF A3 0.3 1.4 0.65 0.000 K 2.4 RECOMMENDED LAND PATTERN uint (mm) 0.650 TYP L 0.224 0.30 0.376 K 0.20 - - E2 0.60 0.70 0.80 D2 1.10 1.20 1.30 - 14 Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.8 XBG6158 ZR Series DISCLAIMER The information described herein is subject to change without notice. Suzhou XySemi Electronic Technology Co., Limited is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other arrangements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without express permission of Suzhou XySemi Electronic Technology Co., Limited is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment ,medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Suzhou XySemi Electronic Technology Co., Limited. Although Suzhou XySemi Electronic Technology Co., Limited. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor may occur. The use of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measure and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. - 15 Suzhou XySemi Electronic Technology Co., Limited. www.xysemi.com.cn Rev0.8