CSLS030N06S2H

CSLS030N06S2H N-channel 60V, 2.8mΩ typ.,107A SGT MOSFET S2 in DFN5*6 Datasheet - production data 1. Descriptions Key Performance Parameters Parameters BVDSS DFN5*6 Value 60 Unit V RDS(on),max 3 mΩ Qg,typ 42 nC ID,pulse 240 A EAS 650 mJ Features Schematic Diagram • Extremely low losses due to very low FOM Rdson*Qg. • High-speed switching. • Qualified for industrial grade applications according to JEDEC. • 100% UIS Tested. Applications High-Efficiency DC-DC Converters, Switching Voltage Regulators and Motor Drivers. Type/Ordering Code Package Marking Related Links CSLS030N06S2H DFN5*6 030N06S2H see Appendix A 1 www.coolsemi.com Rev. 3.0 60V SGT MOSFET CSLS030N06S2H Contents 1. 2. 3. 4. 5. 6. 7. 8. Descriptions ................................................................................................................... 1 Maximum Ratings........................................................................................................... 3 Thermal Characteristics ................................................................................................ 4 Electrical Characteristics .............................................................................................. 5 Electrical Characteristics Diagrams ............................................................................. 6 Test Circuits ................................................................................................................. 10 Package Outlines ......................................................................................................... 11 Appendix ....................................................................................................................... 12 2 www.coolsemi.com Rev. 3.0 60V SGT MOSFET CSLS030N06S2H 2. Maximum Ratings at Tj = 25°C, unless otherwise specified Table 1. Absolute Maximum Ratings Symbol Parameter Values Min. Typ. Max. Unit Test Condition VDS Drain-source voltage1) - - 60 V VGS=0V, ID=250μA ID Continuous drain current (Silicon Limited) - - 107 A TC=25°C ID,pulse Pulsed drain current - - 240 A TC=25°C EAS Avalanche energy, single pulse2) - - 650 mJ ID=51A; VDD =50V IAS Avalanche current - - 51 A - VGS Gate source voltage -20 - 20 V static; AC (f>1 Hz) Ptot Power dissipation - - 62.5 W TC=25°C Tj, Tstg Operating and storage temperature -55 - 150 °C - IS Continuous diode forward current - - 107 A TC=25°C IS,pulse Diode pulse current2) - - 240 A TC=25°C 1) Limited by Tj max. Maximum duty cycle D=0.75. 2) VDD=50V, L=0.5mH, RG=25Ω, Starting Tj=25°C. 3 www.coolsemi.com Rev. 3.0 60V SGT MOSFET CSLS030N06S2H 3. Thermal Characteristics Table 2. Thermal Characteristics Symbol Parameter Values Min. Typ. Max. Unit Test Condition RthJC Thermal resistance, junction - case - - 2 °C/W TC = 25°C RthJA Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads - - 65 °C/W - - 260 °C TC = 25°C Lead Temperature (Soldering, 10 sec) Tsold 4 www.coolsemi.com Rev. 3.0 60V SGT MOSFET CSLS030N06S2H 4. Electrical Characteristics at Tj = 25°C, unless otherwise specified Table 3. Static Characteristics Symbol Parameter Values Min. Typ. Max. Unit Test Condition V(BR)DSS Drain-source breakdown voltage 60 - - V VGS=0V, ID=250μA V(GS)th Gate threshold voltage 2 2.5 4 V VDS=VGS, ID=250μA IDSS Zero gate voltage drain current - - 1 μA VDS=60V, VGS=0V, Tj=25°C IGSS Gate-source leakage current - - ±100 nA VGS=±20V, VDS=0V RDS(on) Drain-source on-state resistance - 2.8 3 mΩ VGS=10V, ID=20A, Tj=25°C RG Gate resistance - 2.6 - Ω VDD=0V,VGS=0V,F=1MHz gfs Transconductance S VDS=5V, ID=20A Unit Test Condition 130 Table 4. Dynamic Characteristics Symbol Parameter Values Min. Typ. Max. Ciss Input capacitance - 4200 - pF VGS=0V, VDS=25V, f=250kHz Coss Output capacitance - 1080 - pF VGS=0V, VDS=25V, f=250kHz Crss Reverse transfer capacitance - 41 - pF td(on) Turn-on delay time - 13.5 - ns tr Rise time - 96 - ns td(off) Turn-off delay time - 40 - ns tf Fall time - 115 - ns VGS=0V, VDS=25V, f=250kHz VDD=30V, VGS=10V, ID=100A, RG =3Ω VDD=30V, VGS=10V, ID=100A, RG =3Ω VDD=30V, VGS=10V, ID=100A, RG =3Ω VDD=30V, VGS=10V, ID=100A, RG =3Ω Min. Typ. Max. Table 5. Gate Charge Characteristics Symbol Parameter Values Unit Test Condition Qgs Gate to source charge - 10 - nC VDD=30V, ID=20A, VGS=0 to 10V Qgd Gate to drain charge - 12 - nC VDD=30V, ID=20A, VGS=0 to 10V Qg Gate charge total - 42 - nC VDD=30V, ID=20A, VGS=0 to 10V Vplateau Gate plateau voltage - 2.8 - V VDD=30V, ID=20A, VGS=0 to 10V Min. Typ. Max. Unit Test Condition Table 6. Reverse Diode Characteristics Symbol Parameter Values VSD Diode forward voltage - 0.8 - V VGS=0V, IF=20A, Tf=25°C trr Reverse recovery time - 35 - ns VR=30V, IF=60A, diF/dt=100A/μs Qrr Reverse recovery charge - 30 - nC VR=30V, IF=60A, diF/dt=100A/μs Irrm Peak reverse recovery current - 1.5 - A VR=30V, IF=60A, diF/dt=100A/μs 5 www.coolsemi.com Rev. 3.0 60V SGT MOSFET CSLS030N06S2H 5. Electrical Characteristics Diagrams Diagram 1: Power dissipation Diagram 2: Max. transient thermal impedance 1 70 10 60 50 0 0.5 ZthJC [K/W] Ptot [W] 10 40 30 0.3 0.1 -1 10 20 0.05 0.02 0.01 10 0 single pulse -2 0 25 50 75 100 125 10 150 Tc [ C] -5 -4 10 10 O -3 10 -2 10 -1 10 tp [s] Ptot=f(TC) ZthJC=f(tp); parameter: D= tp/T Diagram 3: Safe operating area Diagram 4: Typ. output characteristics 3 160 10 10V 8V 140 RDS(ON)limited 6V 2 10 120 10µs 3.5V 5V 4.5V 100 1 10 ID [A] ID [A] 100µs 1ms 10ms 80 60 DC 0 10 4V 3V 40 20 -1 10 -1 10 0 10 1 VDS [V] 10 0 2 10 ID=f(VDS); Tj=25°C; parameter: VGS 6 Rev. 3.0 1 VDS [V] ID=f(VDS); Tj=25°C; D=0; parameter: tp www.coolsemi.com 0 2 60V SGT MOSFET CSLS030N06S2H Diagram 5: Typ. output characteristics Diagram 6: Typ. transfer characteristics 140 160 6V 140 4.5V 5V 4V 120 8V 10V 120 100 3.5V 80 ID [A] ID [A] 100 80 o 150 C 60 60 3V 25 C 20 20 0 o 40 40 0 1 0 0.0 2 0.5 1.0 1.5 VDS [V] 2.0 2.5 3.0 3.5 ID=f(VDS); Tj=125°C; parameter: VGS ID=f(VGS); VDS=20V; parameter: Tj Diagram 7: Gate threshold voltage vs. Junction temperature Diagram 8: On-state resistance vs. Drain current 0.02 1.4 1.3 3V 3.2V 1.2 1.1 3.5V typ 1.0 Rdson [] Normalized Vth 4.0 VGS [V] 0.01 0.9 0.8 0.7 4V 0.6 4.5V 5V 7V 10V 0.5 0.4 -50 -25 0 25 50 75 100 125 0.00 0 150 Tj [ C] O 60 80 100 120 140 RDS(on)=f(ID); Tj=25°C; parameter: VGS 7 Rev. 3.0 40 ID [A] Vth=f(Tj); ID=250μA www.coolsemi.com 20 160 180 60V SGT MOSFET CSLS030N06S2H Diagram 9: On-state resistance vs. Junction Diagram 10: Forward characteristics of temperature reverse diode 100 6 5 o 125 C o 3 Is[A] Rdson [m] 4 typ 25 C 10 2 1 0 -50 -25 0 25 50 75 100 125 1 0.2 150 0.4 0.6 Tj [OC] 0.8 1.0 1.2 Tc [OC] RDS(on)=f(Tj); ID=20A; VGS=10V IF=f(VSD); parameter: Tj Diagram 11: On-state resistance vs. Vgs characteristics Diagram 12: Typ. capacitances 5 1 10 4 10 Ciss C [pF] Rdson [] 0.1 3 10 Coss 0.01 2 10 Crss 1E-3 1 0 5 10 10 RDS(on)=f(Vgs); Tj=25°C; ID=20A 20 30 C=f(VDS); VGS=0V; f=250kHz 8 Rev. 3.0 10 VDS [V] Vgs [V] www.coolsemi.com 0 40 50 60 60V SGT MOSFET CSLS030N06S2H Diagram 13: Typ. gate charge 10 9 8 30V VGS [V] 7 6 5 4 3 2 1 0 0 10 20 30 40 50 Qgate [nC] VGS=f(Qgate); ID=20A pulsed; VDS=30V 9 www.coolsemi.com Rev. 3.0 60V SGT MOSFET CSLS030N06S2H 6. Test Circuits Table 7. Diode Characteristics Test circuit for diode characteristics Diode recovery waveform Table 8. Switching Times Switching times test circuit for inductive load Switching times waveform Table 9. Unclamped Inductive Load Unclamped inductive load test circuit Unclamped inductive waveform 10 www.coolsemi.com Rev. 3.0 60V SGT MOSFET CSLS030N06S2H 7. Package Outlines Figure 1 Outline DFN5*6 Dimensions in mm 11 www.coolsemi.com Rev. 3.0 60V SGT MOSFET CSLS030N06S2H 8. Appendix CoolSemi Webpage: www.coolsemi.com. 12 www.coolsemi.com Rev. 3.0