IRF3205STRPBF-VB

IRF3205STRPBF www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS 60 RDS(on) VGS = 10 V 4 V m Configuration • Package with low thermal resistance A 150 ID • TrenchFET® power MOSFET • 100 % Rg and UIS tested Single TO-263 D G Top View G D S N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL VDS LIMIT Drain-Source Voltage PARAMETER Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a ID TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b IDM 350 65 PD TC = 125 °C Operating Junction and Storage Temperature Range V 65 120 EAS TC = 25 °C UNIT 150 IS IAS L = 0.1 mH 60 211 220 70 A mJ W TJ, Tstg -55 to +175 °C SYMBOL RthJA LIMIT UNIT RthJC 0.65 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c 40 °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). 服务热线：400-655-8788 1 IRF3205STRPBF www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Zero Gate Voltage Drain Current Drain-Source On-State Resistance a Forward Transconductance b TYP. - VDS VGS = 0, ID = 250 μA 60 VDS = VGS, ID = 250 μA 2.0 VDS = 0 V, VGS = ± 20 V IDSS ID(on) On-State Drain Current a MIN. VGS(th) IGSS Gate-Source Leakage TEST CONDITIONS RDS(on) gfs MAX. 4.0 - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS  5 V 120 - - VGS = 10 V ID = 30 A - 6 - VGS = 10 V ID = 30 A, TJ = 125 °C - 12 - VGS = 10 V ID = 30 A, TJ = 175 °C - 15 - - 94 - - - 7000 - - - 96 360 145 - 24 - VDS = 15 V, ID = 30 A UNIT V nA μA A m S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Gate-Source Charge Qg Qgs c Qgd Gate-Drain Charge Gate Resistance Rg Turn-On Delay Time c td(on) Rise Time c tr td(off) Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 75 A f = 1 MHz VDD = 30 V, RL = 0.4 Ω ID  75 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics b ISM Pulsed Current a Forward Voltage VSD IF = 75 A, VGS = 0 715 - 27 - 0.3 1 1.7 - 16 24 - 14 21 - 34 51 - 9 14 - - - 0.9 450 1.5 pF nC Ω ns A V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRF3205STRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 225 150 VGS = 10 V thru 7 V 200 120 150 ID - Drain Current (A) ID - Drain Current (A) 175 VGS = 6 V 125 100 75 50 60 TC = 25 °C 30 VGS = 4 V 25 0 90 0 4 8 12 16 0 20 TC = 125 °C 0 2 TC = -55 °C 4 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 1.5 200 1.2 160 gfs - Transconductance (S) ID - Drain Current (A) TC = -55 °C 0.9 0.6 TC = 25 °C 0.3 0.0 TC = -55 °C TC = 125 °C 0 2 4 6 8 TC = 25 °C 120 80 40 0 10 TC = 125 °C 0 14 0.020 10 000 0.016 8000 0.012 0.008 VGS = 10 V 6000 20 40 60 80 56 70 Ciss 4000 2000 0.004 0 42 Transconductance C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 0.000 28 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 100 ID - Drain Current (A) On-Resistance vs. Drain Current 120 0 Coss Crss 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Capacitance 服务热线：400-655-8788 3 IRF3205STRPBF www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.1 RDS(on) - On-Resistance(Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 110 A VDS = 20 V 8 6 4 2 0 0 20 40 60 80 0.9 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.05 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 1.2 Qg - Total Gate Charge (nC) 10 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0.04 0.03 0.02 TJ = 150 °C 0.01 0.00 1.2 TJ = 25 °C 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 80 0.2 -0.2 ID = 5 mA -0.6 -1.0 ID = 250 μA -1.4 -50 -25 0 25 50 75 100 125 150 175 VDS - Drain-to-Source Voltage (V) 0.6 VGS(th) Variance(V) 1.5 0.6 100 100 -1.8 ID = 10 A VGS = 10 V 1.8 ID = 10 mA 77 74 71 68 65 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 IRF3205STRPBF www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID Limited 100 μs ID - Drain Current (A) 100 1 ms 10 1 0.1 0.01 0.01 10 ms 100 ms 1 s, 10 s, DC Limited by R DS(on)* BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 5 IRF3205STRPBF www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 服务热线：400-655-8788 6 IRF3205STRPBF www.VBsemi.com TO-263 (D2PAK): 3-LEAD L2 E1 K 6 D4 -A- -Bc2 D2 D3 A E L3 L D D1 E3 A A b2 b e Detail “A” c E2 L4 0.010 M A M 2 PL L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. DIM. A b b1 b2 Thin lead Thick lead Thin lead Thick lead c2 D D1 D2 D3 D4 E E1 E2 E3 e K L L1 L2 L3 L4 M INCHES MILLIMETERS MIN. MAX. 0.160 0.190 0.020 0.039 0.020 0.035 0.045 0.055 0.013 0.018 0.023 0.028 0.013 0.017 0.023 0.027 0.045 0.055 0.340 0.380 0.220 0.240 0.038 0.042 0.045 0.055 0.044 0.052 0.380 0.410 0.245 0.355 0.375 0.072 0.078 0.100 BSC 0.045 0.055 0.575 0.625 0.090 0.110 0.040 0.055 0.050 0.070 0.010 BSC 0.002 MIN. MAX. 4.064 4.826 0.508 0.990 0.508 0.889 1.143 1.397 0.330 0.457 0.584 0.711 0.330 0.431 0.584 0.685 1.143 1.397 8.636 9.652 5.588 6.096 0.965 1.067 1.143 1.397 1.118 1.321 9.652 10.414 6.223 9.017 9.525 1.829 1.981 2.54 BSC 1.143 1.397 14.605 15.875 2.286 2.794 1.016 1.397 1.270 1.778 0.254 BSC 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 服务热线：400-655-8788 7 IRF3205STRPBF www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 IRF3205STRPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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