LMAK50N10

LMAK50N10 N-Channel Enhancement Mode MOSFET Description The LMAK50N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =50A RDS(ON) < 28mΩ@ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) LMAK50N10 TO-252 AP50N10D 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V Drain Current-Continuous 50 A Drain Current-Continuous(TC=100℃) 21 A IDM Pulsed Drain Current 70 A PD Maximum Power Dissipation 85 W Derating factor 0.57 W/℃ Single pulse avalanche energy (Note 5) 256 mJ -55 To 175 ℃ 1.8 ℃/W ID ID (100℃) EAS TJ,TSTG RθJC Rev 2.0 : 12.01.2019 Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Case (Note 2) 1/5 www.leiditech.com LMAK50N10 Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Condition Min BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 100 IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V - IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V - VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1 RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A - RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V,ID=10A Clss Input Capacitance Coss Output Capacitance Max Unit - V - 1 μA - ±100 nA 3 V 24 28 mΩ - 28 30 mΩ - 15 - S - 2000 - PF - 300 - PF Crss Reverse Transfer Capacitance - 250 - PF td(on) Turn-on Delay Time - 7 - nS tr Turn-on Rise Time - 7 - nS td(off) Turn-Off Delay Time - 29 - nS tf Turn-Off Fall Time - 7 - nS Qg Total Gate Charge - 39 - nC Qgs Gate-Source Charge - 8 - nC - 12 - nC VDS=25V,VGS=0V, F=1.0MHz VDD=50V,RL=5Ω VGS=10V,RGEN=3Ω VDS=50V,ID=10A, VGS=10V Typ Qgd Gate-Drain Charge VSD Diode Forward Voltage (Note 3) VGS=0V,IS=20A - - 1.2 V IS Diode Forward Current (Note 2) - - - 30 A trr Reverse Recovery Time - 32 - nS Qrr Reverse Recovery Charge TJ = 25°C, IF = 10A di/dt = 100A/μs(Note3) - 53 - nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1、Repetitive Rating: Pulse width limited by maximum junction temperature. 2、Surface Mounted on FR4 Board, t ≤ 10 sec. 3、Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4、Guaranteed by design, not subject to production 5、EAS Condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω, IAS=32A Rev 2.0 : 12.01.2019 2/5 www.leiditech.com LMAK50N10 Typical Electrical and Thermal Characteristics (Curves) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Rev 2.0 : 12.01.2019 Figure 6 Source- Drain Diode Forward 3/5 www.leiditech.com LMAK50N10 Vds Drain-Source Voltage (V) TJ-Junction Temperature (℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) Figure 10ID Current- Junction Temperature Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Rev 2.0 : 12.01.2019 4/5 www.leiditech.com LMAK50N10 Package Mechanical Data TO-252-3L E A B2 Dimensions Ref. C2 H D L V1 C B G V1 V2 A2 V1 E1 Typ. Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 E 6.40 E1 4.63 0.248 0.209REF 5.30REF 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 7° V1 L2 Inches Max. A2 D1 DETAIL A D1 Millimeters Min. 7° 0° V2 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B 0 P0 P2 Ref. t1 A A D1 B0 F W Dimensions T E D K0 P1 A0 B 5° 20 Φ3 29 A A B B Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 0.319 P1 7.90 8.00 8.10 0.311 0.315 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev 2.0 : 12.01.2019 5/5 www.leiditech.com