MOT2N65D

MOT2N65C MOT2N65D N-CHANNEL MOSFET „ PRODUCT CHARACTERISTICS VDSS RDS(on)typ(@V GS =10 V) Qg@type ID Symbol 650V 4.3Ω 12nC 2A 2.Drain 1.Gate „ APPLICATIONS * High efficiency switch mode power supplies * Electronic lamp ballasts based on half bridge * LED power supplies 3.Source 4 4 „ FEATURES * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 2 1 3 2 3 TO-251 TO-252 „ ORDER INFORMATION Order codes Halogen-Free Halogen N/A N/A Package Packing 2500 pieces /Reel 70 pieces /Tube TO-252 TO-251 MOT2N65D MOT2N65C  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) SYMBOL PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) VDSS VGSS I AR ID IDM EAS dv/dt Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) Power Dissipation TO-251/TO-252 Drain Current RATINGS 650 ±30 2.0 2.0 8.0 110 4.5 44 UNIT V V A A A mJ V/ns W °С °С °С PD TJ +150 Junction Temperature -55 ~ +150 TOPR Operating Temperature TSTG Storage Temperature -55 ~ +150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=55mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C -1- www.mot-mos.com MOT2N65C MOT2N65D N-CHANNEL MOSFET  ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER Off characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT VGS = 0V, ID = 250μA 650 VDS = 650V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C On characteristics Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A Dynamic characteristics Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS f =1MHz Reverse Transfer Capacitance CRSS Switching characteristics Turn-On Delay Time tD (ON) VDD =30V, ID =0.5A, Turn-On Rise Time tR RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=50V, VGS=10V, Gate-Source Charge QGS ID=1.3A (Note 1, 2) Gate-Drain Charge QGD Drain-source diode characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM 0.4 - - V 10 μA 100 nA -100 nA V/°С 4.3 4.0 6.0 V Ω 240 35 4.6 - pF pF pF 40 40 50 22 12 ns ns 5.2 2 - - 1.4 2.0 8.0 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature -2- www.mot-mos.com ns ns nC nC nC V A A MOT2N65C MOT2N65D N-CHANNEL MOSFET  TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P. W. D= P.W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms -3- www.mot-mos.com MOT2N65C MOT2N65D N-CHANNEL MOSFET  TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms -4- www.mot-mos.com MOT2N65C MOT2N65D N-CHANNEL MOSFET  TY PICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) 250 200 150 100 50 200 150 100 50 0 0 0 300 0 150 450 600 750 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics Drain-Source Diode Forword Current, ISD (A) 1.0 VGS=10V, ID=1A 0.8 0.6 0.4 0.2 0 0 0.6 1.2 1.8 2.4 3.0 3.6 Gate Threshold Voltage, VTH (V) Drain-Source Diode Forword Current vs. Source to Drain Voltage 2.4 1.2 Drain Current, ID (A) Drain Current, ID (µA) 300 2.0 1.6 1.2 0.8 0.4 0 0 0.7 1.4 2.1 2.8 3.5 4.2 Drain to Source Voltage, VDS (V) -5- 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) www.mot-mos.com MOT2N65C MOT2N65D N-CHANNEL MOSFET n TO-251 PACKAGE OUTLINE DIMENSIONS -6- www.mot-mos.com MOT2N65C MOT2N65D N-CHANNEL MOSFET n TO-252 PACKAGE OUTLINE DIMENSIONS -7- www.mot-mos.com