NTD2955G-VB

NTD2955G www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.061 at V GS = - 10 V - 30 0.072 at VGS = - 4.5 V - 25 • TrenchFET® Power MOSFET • 100 % UIS Tested Qg (Typ) APPLICATIONS 10 • Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V - 30 ID - 25 IDM - 30 Continuing Source Current (Diode Conduction) IS - 20 Avalanche Current IAS - 20 Pulsed Drain Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C EAS 7.2 mJ 34a PD W 4b TJ, Tstg Operating Junction and Storage Temperature Range A - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 20 25 62 75 5 6 Unit °C/W Notes: a. See SOA curve for voltage derating. b. Surface Mounted on 1" x 1" FR-4 boad. 服务热线：400-655-8788 1 NTD2955G www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA - 1.0 IGSS VDS = 0 V, VGS = ± 20 V Typa Max - 2.0 - 3.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistance b Forward Transconductance Dynamic rDS(on) Input Capacitance Ciss Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Timec td(on) Turn-Off Delay Timec td(off) Turn-On Delay Fall Timec - 50 VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 150 VDS = - 5 V, VGS = - 10 V tr - 10 nA µA A VGS = - 10 V, ID = - 5 A 0.061 VGS = - 10 V, ID = - 5 A, TJ = 125 °C 0.100 VGS = - 10 V, ID = - 5 A, TJ = 175 °C 0.150 VGS = - 4.5 V, ID = - 2 A 0.072 VDS = - 15 V, ID = - 5 A 8 gfs Output Capacitance Rise Timec -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C ID(on) b ± 100 VDS = - 60 V, VGS = 0 V V Ω S 1000 VDS = - 25 V, VGS = 0 V, f = 1 MHz pF 120 100 10 VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A 2.1 f = 1 MHz 8.0 nC 3.2 Ω 6 VDD = - 30 V, RL = 3.57 Ω ID ≅ - 8.4 A, VGEN = - 10 V, RG = 2.5 Ω tf 15 ns 16 8 b Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM Forward Voltageb VSD Reverse Recovery Time trr Reverse Recovery Time Qrr IF = - 2 A, VGS = 0 V IF = - 8 A, di/dt = 100 A/µs - 0.9 - 30 A - 1.3 V 50 ns 80 nC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 NTD2955G www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 20 30 TC = - 55 °C VGS = 10 thru 5 V 25 °C 16 ID - Drain Current (A) I D - Drain Current (A) 24 4V 18 12 3V 12 125 °C 8 4 6 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 0 2 4 6 8 10 -VGS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 12 0.12 TC = - 55 °C 0.10 25 °C rDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 10 125 °C 8 6 4 2 VGS = 4.5 V 0.08 VGS = 10 V 0.07 0.05 0.03 0 0.01 0 2 4 6 8 10 0 4 8 -ID - Drain Current (A) 16 20 -ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 800 20 V GS - Gate-to-Source Voltage (V) 700 600 C - Capacitance (pF) 12 Ciss 500 400 300 200 Coss 100 Crss 0 0 VDS = 30 V ID = 8.4 A 16 12 8 4 0 10 20 30 40 50 -VDS - Drain-to-Source Voltage (V) Capacitance 60 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 NTD2955G www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 2.3 2.0 10 VGS = 10 V ID = 50 A TJ = 150 °C I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1 1.7 1.4 1.1 0.1 TJ = 25 °C 0.01 0.8 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0.0 0.2 TJ - Junction Temperature (°C) 0.4 0.6 0.8 1.0 -VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 10 100 8 10 I D - Drain Current (A) I D - Drain Current (A) 10 µs 6 4 1 ms 1 10 ms 100 ms, DC 0.1 TC = 25 °C Single Pulse 0.01 2 0 100 µs *Limited by rDS(on) 0.001 0 25 50 75 100 125 150 TC - Case Temperature (°C) Drain Current vs. Case Temperature 175 0.1 *VGS 1 10 100 -VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 NTD2955G www.VBsemi.com THERMAL RATINGS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-−4 10- 3 10- 2 10- 1 1 10 100 600 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-−4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 NTD2955G www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 6 NTD2955G www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) 0.420 (10.668) (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 NTD2955G www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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