MOT
MOT13003C/MOT13003D
NPN SILICON TRANSISTOR
Symbol
PRODUCT CHARACTERISTICS
BVCBO
700V
BVCEO
400V
10-40
HFE@5V1A
1.5A
IC
FEATURES
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
MO
T1
30
03
c
d
03
30
T1
MO
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
TO-251
TO-252
ORDER INFORMATION
Order codes
Package
Packing
Halogen-Free
Halogen
N/A
MOT13003C
TO-251
70 pieces/Tube
N/A
MOT13003D
TO-252
2500 pieces /Reel
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage (VBE=0)
Collector-Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
SYMBOL
VCEO(SUS)
VCES
VCBO
VEBO
IC
ICM
IB
IBM
IE
IEM
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
TO-251/TO-252
RATINGS
400
700
700
9
1.5
3
0.75
1.5
2.25
4.5
1.56
UNIT
V
V
V
V
PD
Total Power Dissipation TA=25°C
TC=25°C
TO-251/TO-252
25
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
-1-
A
A
A
W
W
°C
°C
MOT
MOT13003C/MOT13003D
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
SYMBOL
TC=25°C
TC=100°C
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note)
VCEO(SUS) IC=10 mA , IB=0
VCEO=Rated Value,
ICEO
VBE(OFF)=1.5 V
IEBO
VEB=9 V, IC=0
400
V
1
5
1
See Fig.5
RBSOA
See Fig.6
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test : PW=300μ
MIN TYP MAX UNIT
Is/b
hFE1
hFE2
DC Current Gain
TEST CONDITIONS
fT
COB
IC=0.4A, VCE=5V
IC=1A, VCE=5V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.2A, IB=0.4A
IC=1A, IB=0.25A, TC=100°C
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1A, IB=0.25A, TC=100°C
14
5
IC=100mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
32
30
0.5
1
3
1
1
1.2
1.1
10
21
mA
mA
V
V
MHz
pF
tD
tR
tS
tF
VCC=125V, IC=1A, IB1=IB2=0.2A,
tP=25μs, Duty Cycle≤1%
0.05 0.1
0.5
1
2
4
0.4 0.7
μs
μs
μs
μs
tSTG
tC
tF
IC=1A, Vclamp=300V, IB1=0.2A,
VBE(OFF)=5Vdc, TC=100°C
1.7
4
0.29 0.75
0.15
μs
μs
μs
≤2%
-2-
MOT
MOT13003C/MOT13003D
NPN SILICON TRANSISTOR
TY PICAL CHARACTERISTICS
DC Current Gain
Collector Saturation Region
2
DC Current Gain, hFE
60
Collector-Emitter Voltage, VCE(V)
80
TJ=150℃
40
25℃
30
20
-55℃
1
0
8
VCE=2V
- - - - - -VCE=5V
6
4
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
TJ=25℃
1.6
Ic=0.1A 0.3A 0.5A
1.2
0.4
0
0.002
0.005 0.01
Base-Emitter Voltage
0.05
0.1
0.2
0.5
1
2
Collector-Emitter Saturation Region
0.35
VBE(SAT) @ IC/IB=3
- - - - - -VBE(ON) @ VCE=2V
1.2
0.3
0.25
1
Voltage, V(V)
Voltage, V(V)
0.02
Base Current, IB (A)
1.4
TJ=-55℃
25℃
0.8
25℃
0.6
0.05 0.07 0.1
0.2
0.3
TJ=-55℃
0.2
25℃
0.15
0.1
150℃
150℃
0.02 0.03
Ic/IB=3
0.05
0.5 0.7
1
0
0.02 0.03
2
0.05 0.07 0.1
Collector Current,IC (A)
Collector cut-off Region
4
Capacitance, C (pF)
TJ=150℃
125℃
100℃
1
0
2
TJ=25℃
300
10
10
1
Capacitance
VCE=250V
10
0.5 0.7
0.3
500
3
2
0.2
Collector Current, IC (A)
10
Collector Current, IC (μA)
1.5A
0.8
Collector Current,IC (A)
0.4
1A
75℃
50℃
Cib
200
100
70
50
30
20
10
-1
10
-0.4
7
5
FORWARD
REVERSE
-0.2
Cob
10
25℃
0
+0.2
+0.4
0.1 0.2 0.5
+0.6
Base-Emitter Voltage, VBE (V)
1
2
5
10 20
50
100 200 500
Reverse Voltage, VR (V)
-3w
1000
MOT
MOT13003C/MOT13003D
NPN SILICON TRANSISTOR
TY PICAL CHARACTERISTICS(Cont.)
-4-
MOT
MOT13003C/MOT13003D
NPN SILICON TRANSISTOR
n TO-252-2L PACKAGE OUTLINE DIMENSIONS
-5-
MOT
MOT13003C/MOT13003D
NPN SILICON TRANSISTOR
n TO-251-3L PACKAGE OUTLINE DIMENSIONS
-6-
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