FH3060D

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD FH3060D 30V N-Channel MOSFET   Features  30V/60A RDS(ON)= 8.5m Ω typ @ VGS=10V RDS(ON)= 11.5m Ω typ @ VGS=4.5V  Applications ● Power switching application ● Load switching ● Uninterruptible power supply Lead free and Green Device Available TO-252 D D G G S S Schematic diagram Marking and pin assignment TO-252 top view Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol V DSS V GSS Parameter Drain-to-Source Voltage Gate-to-Source Voltage ID Continuous Drain Current I DP Pulsed Drain Current PD Maximum Power Dissipation TJ , T STG TC=25°C TC=100°C T C=25°C TC=25°C TC=100°C Junction & Storage Temperature Range Maximum Unit 30 ±20 60 37 148 54 21 -55~150 V V A A A °C Typical Unit 2.3 62.5 ℃/W W Thermal Characteristics Symbol Rθjc Rθja www.xfhong.com Parameter Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 1/5 Ver1.1 FH3060D 30V N-Channel MOSFET Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(on)1 Drain-Source On-Resistance Test Conditions Min. Typ Max. Unit VGS=0V,ID=250uA VDS=30V,VGS=0V TJ=85°C VDS=VGS,ID=250uA 30 — — — — 1 — — 1.7 1 10 3 VGS=±20V, VDS=0V VGS=10V, ID=15A VGS=4.5V, ID=15A — — — 8.5 11.5 ISD=15A,VGS=0V — 0.88 IF=15A, dI/dt=100A/us — — 23 15 VGS=0V, VDS=0V, Frequency=1MHz — 1.5 — — — — — — — 920 187 130 15 25 60 17 — — — 22 5 6.5 ±100 10 15 V uA V nA mΩ Diode Characteristics VSD1 IS trr Qrr Diode Forward Voltage Diode Continuous Forward Current Reverse Recovery Time Reverse Recovery Charge Dynamic Characteristics2 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Gate Charge Characteristics2 Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge VGS=0V, VDS=30V Frequency=1MHz VDD=15V, RL=30Ω ID=15A, VGS=10V RG=6Ω VDS=15V,VGS=10V ID=15A 1.3 60 V A ns nC — Ω pF ns nC Note: 1: Pulse test; pulse width ≦ 300ns, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. www.xfhong.com 2/5 Ver1.1 FH3060D 30V N-Channel MOSFET Typical Operating Characteristics www.xfhong.com 3/5 Ver1.1 FH3060D 30V N-Channel MOSFET Typical Operating Characteristics www.xfhong.com 4/5 Ver1.1 FH3060D 30V N-Channel MOSFET Package Information : TO-252 www.xfhong.com 5/5 Ver1.1