STU606S-VB

STU606S www.VBsemi.com N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 60 • TrenchFET® Power MOSFET • 175 °C Junction Temperature rDS(on) (Ω) ID (A)a 0.025 at VGS = 10 V 45 0.030 at VGS = 4.5 V RoHS* 40 COMPLIANT VDS (V) TO-252 Available D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V 45 ID 35 IDM 100 Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Pulsed Drain Current Single Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C EAS 20 mJ 100 PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range A - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 18 22 40 50 3.2 4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec. 服务热线:400-655-8788 1 STU606S www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max 2.0 3.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 60 V, VGS = 0 V, TJ = 175 °C Drain-Source On-State Resistanceb b Forward Transconductance rDS(on) gfs VDS = 5 V, VGS = 10 V V nA µA 250 50 A VGS = 10 V, ID = 15 A 0.025 VGS = 10 V, ID = 15 A, TJ = 125 °C 0.055 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.069 VGS = 4.5 V, ID = 10 A 0.030 VDS = 15 V, ID = 15 A 20 VGS = 0 V, VDS = 25 V, f = 1 MHz 140 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) 1500 pF 60 11 VDS = 30 V, VGS = 10 V, ID = 23 A 17 3 nC 3 VDD = 30 V, RL = 1.3 Ω ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω tf 8 15 15 25 30 45 25 40 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 15 A, di/dt = 100 A/µs 30 60 ns 50 A Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线:400-655-8788 2 STU606S www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 50 100 VGS = 10 thru 6 V 5V 40 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 4V 20 30 20 TC = 125 °C 10 25 °C 3V - 55 °C 0 0 2 0 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 32 6 0.10 TC = - 55 °C 0.08 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 25 °C 24 125 °C 16 8 0 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 5 10 15 20 25 0 10 20 30 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 50 10 V GS - Gate-to-Source Voltage (V) 1000 800 C - Capacitance (pF) 0.06 Ciss 600 400 200 Coss Crss 0 0 VDS = 30 V ID = 23 A 8 6 4 2 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance 60 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) Gate Charge 服务热线:400-655-8788 3 STU606S www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 100 2.5 VGS = 10 V ID = 15 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( °C) On-Resistance vs. Junction Temperature 175 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 服务热线:400-655-8788 4 STU606S www.VBsemi.com THERMAL RATINGS 100 25 *rDS(on) Limited 10 µs 100 µs I D - Drain Current (A) I D - Drain Current (A) 20 15 10 10 1 ms 10 ms 1 100 ms dc TC = 25 °C Single Pulse 5 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线:400-655-8788 5 STU606S www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 L3 0.89 1.27 0.035 0.070 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线:400-655-8788 6 STU606S www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) 0.420 (10.668) (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线:400-655-8788 7 STU606S www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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