MDT30N06L

Green Product MDT30N06L 60V N-Channel Power MOSFET KEY CHARACTERISTICS DESCRIPTION ● VDS = 60V,ID = 30A The MDT30N60L uses advanced trench technology to provide RDS(ON) < 30mΩ @ VGS=10V excellent RDS(ON), low gate charge. It can be used in a wide RDS(ON) < 40mΩ @ VGS=4.5V variety of applications. ● High density cell design for lower Rdson Application ● Fully characterized avalanche voltage and current ●Power switching application ● Good stability and uniformity with high EAS ●Hard switched and High frequency circuits ● Excellent package for good heat dissipation ●Uninterruptible power supply 100% UIS TESTED！ 100% DVDS TESTED！ TO-252-2L Top View Schematic diagram Package Marking And Ordering Information Device Marking 30N06 Ordering Codes MDT30N06L Package Product Code TO-252 Packing 30N06 Absolute Maximum Ratings (TA=25℃ Parameter unless otherwise noted) Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID (Note 1) Drain Current-Pulsed IDM Maximum Power Dissipation(Tc=25℃) PD (Note 2) Single pulse avalanche energy EAS Operating Junction and Storage Temperature Range TJ,TSTG Reel Limit Unit 60 V ±20 V 30 A 80 A 44 W 56 mJ -55 To 175 ℃ 3.4 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Case Page1 RθJC www.mns-kx.com V1.0 Green Product MDT30N06L Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.3 1.8 2.3 V Drain-Source On-State Resistance(Note 3) RDS(ON) VGS=10V, ID=10A - 25 30 VGS=4.5V, ID=10A - 30 40 VDS=5V,ID=10A - 11 - S - 670 - pF - 76 - pF - 66 - pF - 19.2 - nS On Characteristics Forward Transconductance gFS mΩ Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching VDS=25V,VGS=0V, f=1.0MHz Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V, ID=10A, - 6.4 - nS td(off) VGS=10V,RGEN=10Ω - 29.2 - nS 8.2 - nS - 21 - nC - 5 - nC - 6.5 - nC - - 1.2 V - 33.6 - nS - 32.1 - nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=48V,ID=10A VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage VSD Reverse Recovery Time Trr Reverse Recovery Charge Qrr VGS=0V,IS=20A （note3） Tj=25℃，IF=10A，di/dt=100A/uS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition :T j=25℃,VDD=30V,VGS=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. Page2 www.mns-kx.com V1.0 Green Product MDT30N06L Characteristics Curves Page3 Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-Resistance vs. ID and VGS Figure 4 On-Resistance vs. Junction Temperature Figure 5 On-Resistance vs. VGS Figure 6 Body Diode Forward Voltage www.mns-kx.com V1.0 Green Product MDT30N06L Figure 7 Gate-Charge Characteristics Figure 9 Maximum Forward Biased Safe Operation Area Figure 11 Page4 Figure 8 Capacitance Characteristics Figure 10 Single Pulse Power Rating Junction-to-Ambient Normalized Maximum Transient Thermal Impedance www.mns-kx.com V1.0 Green Product MDT30N06L Test Circuit and Waveform Gate Charge Test Circuit Gate Charge Test Waveform Resistive Switching Test Circuit Resistive Switching Test Waveforms Unclamped Inductive Switching (UIS) Test Circuit Unclamped Inductive Switching (UIS) Test Waveforms Diode Recovery Test Circuit Page5 www.mns-kx.com Diode Recovery Test Waveforms V1.0 Green Product MDT30N06L Package Description Values(mm) Items MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0 .3 T 1.40 1.60 Y 5.10 6.30 TO-252 Page6 www.mns-kx.com Package V1.0 Green Product MDT30N06L NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: 深圳市迈诺斯科技有限公司（总部） Address：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C Mobile：13632637333 Phone：0755-83273777 Page7 www.mns-kx.com V1.0