MPG08N68S

68V N-Channel Power MOSFET DESCRIPTION The MPG08N68 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Schematic diagram ① VDS = 68V,ID = 100A ② RDS(ON) < 7.5mΩ @ VGS=10V ③ Special process technology for high ESD capability ④ High density cell design for ultra low Rdson ⑤ Fully characterized avalanche voltage and current ⑥ Good stability and uniformity with high EAS ⑦ Excellent package for good heat dissipation TO-263 TO-220 Application ① Power switching application ② Hard switched and High frequency circuits ③ Uninterruptible power supply Package Marking And Ordering Information Device Marking 08N68 08N68 Ordering Codes MPG08N68-S MPG08N68-P Package TO-263 TO-220 Absolute Maximum Ratings (TA=25℃ Parameter Product Code MPG08N68S MPG08N68P Packing Reel Tube unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 68 V Gate-Source Voltage VGS ±20 V ID 100 A IDM 340 A PD 125 W EAS 370 mJ -55 To 175 ℃ Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single pulse avalanche energy(Note 2) TJ,TSTG Operating Junction and Storage Temperature Range www.mns-kx.com Thermal Characteristic Thermal Resistance,Junction-to-Case RθJC ℃/W 1.2 Electrical Characteristics (TA=25℃ unless otherwise noted) Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Parameter Min Typ Max Unit BVDSS VGS=0V ID=250μA 68 - - V Zero Gate Voltage Drain Current IDSS VDS=68V,VGS=0V Gate-Body Leakage Current - - 1 μA IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source On-State Resistance(Note 3) RDS(ON) VGS=10V, ID=45A - 6.5 7.5 mΩ Forward Transconductance GFS VDS=10V,ID=20A - 20 - S Dynamic Characteristics Input Capacitance Clss - 3200 - pF Output Capacitance Coss - 440 - pF Reverse Transfer Capacitance Crss - 180 - pF - 16 - nS On Characteristics Switching Characteristics VDS=30V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V, ID=30A, - 95 - nS Turn-Off Delay Time td(off) VGS=10V,RGEN=6Ω - 47 - nS Turn-Off Fall Time tf 31 - nS Total Gate Charge Qg - 40 - nC Gate-Source Charge Qgs 11 - nC Qgd VGS=10V - Gate-Drain Charge - 15 - nC VSD VGS=0V,IS=90A - - 1.2 V VDS=30V,ID=20A Drain-Source Diode Characteristics Diode Forward Voltage(Note 3) Notes: 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature. EAS condition :T j=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Guaranteed by design, not subject to production. www.mns-kx.com Characteristics Curves Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-Resistance vs. ID and VGS Figure 4 On-Resistance vs. Junction Temperature Figure 5 On-Resistance vs. VGS Figure 6 Body Diode Forward Voltage www.mns-kx.com Figure 7 Gate-Charge Characteristics Figure 8 Capacitance Characteristics Figure 9 Maximum Forward Biased Safe Operation Figure 10 Single Pulse Power Rating Area Junction-to-Ambient Figure 11 Normalized Maximum Transient Thermal Impedance www.mns-kx.com Package Description Items Values(mm) MIN MAX A 9.80 10.40 B B1 C D E F G H K L1 L2 I Q R N 8.90 0 4.40 1.16 0.70 0.30 1.07 1.30 0.95 14.50 1.60 0 0° 0.4 2.39 9.50 0.10 4.80 1.37 0.95 0.60 1.47 1.80 1.37 16.50 2.30 0.2 8° 0.4 2.69 TO-263 Package www.mns-kx.com Items Values(mm) MIN MAX A 9.60 10.6 B B1 C 15.0 8.90 4.30 16.0 9.50 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 2.70 3.80 L 12.6 14.8 N 2.34 2.74 Q 2.40 3.00 φp 3.50 3.90 TO-220 Package www.mns-kx.com NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to change withoutprior notice. CONTACT: 深圳市迈诺斯科技有限公司（总部） 地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C 邮编：518025 电话：0755-83273777 www.mns-kx.com