SWD630D

SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ TO-252 TO-220 High ruggedness Low RDS(ON) (Typ 0.27Ω)@VGS=10V Low Gate Charge (Typ 20nC) Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification, DC-DC BVDSS : 200V ID : 9A RDS(ON) : 0.27Ω 1 1 2 2 2 3 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW P 630D SW630D TO-220 TUBE 2 SW D 630D SW630D TO-252 REEL Absolute maximum ratings Value Symbol Parameter Unit TO-220 VDSS ID Drain to source voltage TO-252 200 V Continuous drain current (@TC=25oC) 9* A Continuous drain current (@TC=100oC) 5.7* A 36 A ± 20 V IDM Drain current pulsed (note 1) VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 156 mJ EAR Repetitive avalanche energy (note 1) 16 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@TC=25oC) PD TSTG, TJ TL Derating factor above 25oC Operating junction temperature & storage temperature 138.9 96.2 W 1.1 0.8 W/oC -55 ~ + 150 oC 300 oC Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value TO-220 TO-252 Rthjc Thermal resistance, Junction to case 0.9 Rthja Thermal resistance, Junction to ambient 54 Copyright@ Semipower Technology Co., Ltd. All rights reserved. 1.3 Unit oC/W oC/W May.2022. Rev. 4.0 1/6 SW630D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off ch188aracteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 200 V V/oC 0.23 VDS=200V, VGS=0V 1 uA VDS=160V, TC=125oC 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 4 V 0.4 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=4.5A 0.27 Forward transconductance VDS=20V, ID=4.5A 6.2 Gfs 2 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 720 VGS=0V, VDS=25V, f=1MHz 117 pF 30 7 VDS=100V, ID=9A, RG=25Ω, VGS=10V (note 4,5) 33 ns 41 Fall time 29 Qg Total gate charge 20 Gate-drain charge VDS=160V, VGS=10V, ID=9A Ig=13mA (note 4,5) Qgs Gate-source charge Qgd Rg Gate resistance VDS=0V, Scan F mode 1.9 4 nC 8 Ω Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 9 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 36 A Diode forward voltage drop. IS=9A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=9A, VGS=0V, dIF/dt=100A/us 128 ns 556 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =3.85mH, IAS =9A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 9A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 2/6 SW630D Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 3/6 SW630D Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9. Maximum safe operating area(TO-220) Fig. 10. Maximum safe operating area(TO-252) Fig. 11. Transient thermal response curve(TO-220) Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 4/6 SW630D Fig. 12. Transient thermal response curve(TO-252) Fig. 13. Gate charge test circuit & waveform Fig. 14. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD 10VIN DUT 10% 10% VIN td(on) tr td(off) tON Copyright@ Semipower Technology Co., Ltd. All rights reserved. tf tOFF May.2022. Rev. 4.0 5/6 SW630D Fig. 15. Unclamped Inductive switching test circuit & waveform Fig. 16. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 4.0 6/6