IRFR9120TRPBF-VB

IRFR9120TRPBF www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.250 at VGS = - 10 V - 8.8 0.280 at VGS = - 4.5 V - 8.0 Qg (Typ.) 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 • Power Switch • DC/DC Converters TO-252 S Drain Connected to Tab G D G S Top View G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C IDM Pulsed Drain Current Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range ID L = 0.1 mH TC = 25 °C TA = 25 °Cc V - 8.8 - 7.1 - 25 IAS - 18 EAS 16.2 PD Unit 32.1 A mJ b 2.5 W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 50 Junction-to-Case (Drain) RthJC 3.9 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). 服务热线：400-655-8788 1 IRFR9120TRPBF www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 100 VGS(th) VDS = VGS, ID = - 250 µA -1 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 VDS = 0 V, VGS = ± 20 V ± 250 VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 100 V, VGS = 0 V, TJ = 150 °C - 250 VDS ≤ - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 15 V nA µA A VGS = - 10 V, ID = - 3.6 A 0.250 VGS = - 4.5 V, ID = - 3.4 A 0.280 VDS = - 15 V, ID = - 3.6 A 12 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Rise Timec VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A Fall Timec td(off) pF 23.2 34.8 11.7 17.6 3.5 f = 1 MHz VDD = - 50 V, RL = 17.2 Ω ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 1.2 5.7 11.5 7 14 12 18 33 50 9 18 - 8.8 Pulsed Current ISM - 15 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 2.9 A, VGS = 0 V - 0.8 IF = - 2.9 A, dI/dt = 100 A/µs 98 trr IRM(REC) Qrr Ω ns b IS Continuous Current nC 4.8 td(on) tr c 65 41 Rg Gate Resistance Turn-On Delay Timec Turn-Off Delay Time 1055 VGS = 0 V, VDS = - 50 V, f = 1 MHz A - 1.5 V 50 75 ns -4 -6 A 147 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRFR9120TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 0.50 V GS = 10 V thru 5 V V GS = 4 V R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 12 9 6 V GS = 3 V 3 0 0.40 0.30 V GS = 4.5 V V GS = 10 V 0.20 0.10 0 1 2 3 4 0 3 6 V DS - Drain-to-Source Voltage (V) 12 15 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 2.0 0.80 R DS(on) - On-Resistance (Ω) 1.6 I D - Drain Current (A) 9 1.2 0.8 T C = 25 °C 0.4 0.60 T J = 150 °C 0.40 T J = 25 °C 0.20 T C = 125 °C T C = - 55 °C 0.0 0.00 0 1 2 3 4 0 V GS - Gate-to-Source Voltage (V) 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 25 10 VGS - Gate-to-Source Voltage (V) g fs - Transconductance (S) ID = 3.6 A 20 T C = - 55 °C 15 T C = 25 °C 10 T C = 125 °C 5 0 8 V DS = 50 V 6 V DS = 25 V 4 V DS = 80 V 2 0 0 3 6 9 ID - Drain Current (A) Transconductance 12 15 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 IRFR9120TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 - 1.1 I S - Source Current (A) - 1.4 T J = 150 °C ID = 250 μA VGS(th) (V) 10 - 1.7 T J = 25 °C 1 - 2.0 0.1 0.0 0.3 0.6 0.9 - 2.3 - 50 1.2 0 25 50 75 V SD - Source-to-Drain Voltage (V) T J - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 100 125 150 100 125 150 - 100 1200 VDS - Drain-to-Source Voltage (V) 1600 C - Capacitance (pF) - 25 Ciss 800 400 - 106 ID = 250 μA - 112 - 118 - 124 Coss Crss 0 0 20 40 60 80 - 130 - 50 100 - 25 0 25 50 75 V DS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 2.1 10 V GS = 10 V ID = 3.6 A V GS = 4.5 V 1.3 0.9 I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance 8 1.7 6 4 2 0.5 - 50 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 T J - Junction Temperature (°C) T C - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 服务热线：400-655-8788 4 IRFR9120TRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 Limited by R DS(on)* I D - Drain Current (A) IDAV (A) 10 TJ = 25 °C TJ = 150 °C 10 100 μs 1 ms 1 10 ms 100 ms 1 s, 10 s, DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 1 10-6 10-5 10-4 10-3 10-2 10-1 Time (s) Single Pulse Avalanche Current Capability vs. Time 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10 -4 0.02 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 IRFR9120TRPBF www.VBsemi.com TO-252AA Case Outline E C2 L3 H D b2 D1 e1 E1 L gage plane height (0.5 mm) e L5 L4 b C A1 INCHES MILLIMETERS A b3 DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. 服务热线：400-655-8788 6 IRFR9120TRPBF www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 IRFR9120TRPBF www.VBsemi.com TOĆ251AA (DPAK) E A L2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 b2 e c A1 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 8.89 9.53 0.350 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 Note: Dimension L3 is for reference only. 服务热线：400-655-8788 8 IRFR9120TRPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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