SWD6N80D

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ TO-251N TO-220F TO-252 TO-262 TO-262N BVDSS : 800V ID High ruggedness Low RDS(ON) (Typ 2.0Ω)@VGS=10V Low Gate Charge (Typ 32nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application:LED , Charger, SMPS RDS(ON) : 2.0Ω 1 2 1 3 2 1 3 2 1 3 2 2 3 1. Gate 2. Drain 3. Source General Description : 6A 1 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item 1 2 3 4 5 Sales Type SW N 6N80D SW F 6N80D SW D 6N80D SW U 6N80D SW J 6N80D Marking SW6N80D SW6N80D SW6N80D SW6N80D SW6N80D Package TO-251N TO-220F TO-252 TO-262 TO-262N Packaging TUBE TUBE REEL TUBE TUBE Absolute maximum ratings Value Symbol Parameter Unit TO-251N TO-220F TO-252 TO-262 TO-262N VDSS Drain to source voltage Continuous drain current ID (@TC=25oC) Continuous drain current (@TC=100oC) V 6* A 3.8* A 24 A ± 30 V IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 180 mJ EAR Repetitive avalanche energy (note 1) 15 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns PD (note 1) 800 Total power dissipation (@TC=25oC) Derating factor above 25oC 178.6 23.1 113.6 186.6 W 1.4 0.19 0.9 1.5 W/oC TSTG, TJ Operating junction temperature & storage temperature TL Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. -55 ~ + 150 oC 300 oC *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value TO-251N TO-220F TO-252 TO-262 TO-262N Rthjc Thermal resistance, Junction to case 0.7 5.4 Rthja Thermal resistance, Junction to ambient 90 52 Copyright@ Semipower Technology Co., Ltd. All rights reserved. Unit 0.67 oC/W 67 oC/W May.2022. Rev. 8.0 1/7 1.1 SW6N80D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 800 V V/oC 0.51 VDS=800V, VGS=0V 1 uA VDS=640V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 2.4 Ω On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=3A 2.0 Forward transconductance VDS=30V, ID=3A 6.4 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 12 td(on) Turn on delay time 16 tr td(off) tf Qg Rising time Turn off delay time 1190 VGS=0V, VDS=25V, f=1MHz 91 VDS=400V, ID=6A, RG=25Ω, VGS=10V (note 4,5) pF 30 ns 73 Fall time 35 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 32 VDS=640V, VGS=10V, ID=6A (note 4,5) 6 nC 14 VDS=0V, Scan F mode Ω 1.8 Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 6 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 24 A Diode forward voltage drop. IS=6A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=6A, VGS=0V, dIF/dt=100A/us 530 ns 3.6 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 22.5mH, IAS = 4A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 6A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 8.0 2/7 SW6N80D Fig. 1. On-state characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 2. Transfer characteristics Fig. 4. On-state current vs. diode forward voltage Fig. 6. On-resistance variation vs. junction temperature Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 8.0 3/7 SW6N80D Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area（TO-251N） Fig. 11. Maximum safe operating area（TO-252） Fig. 8. Capacitance Characteristics Fig. 10. Maximum safe operating area（TO-220F） Fig. 12. Maximum safe operating area （TO-262&TO-262N） Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 8.0 4/7 SW6N80D Fig. 13. Transient thermal response curve （TO-251N） Fig. 14 Transient thermal response curve （TO-220F） Fig. 15. Transient thermal response curve （TO-252） Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 8.0 5/7 SW6N80D Fig. 16. Transient thermal response curve （TO-262&TO-262N） Fig. 17. Gate charge test circuit & waveform Fig. 18. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON Copyright@ Semipower Technology Co., Ltd. All rights reserved. td(off) tf tOFF May.2022. Rev. 8.0 6/7 SW6N80D Fig. 19. Unclamped Inductive switching test circuit & waveform Fig. 20. Peak diode recovery dv/dt test circuit & waveform DU T + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Same type as DUT Diode recovery dv/dt VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ Semipower Technology Co., Ltd. All rights reserved. May.2022. Rev. 8.0 7/7