HKTD90N03

HKTD90N03 MOSFET (N-CHANNEL) FEATURES z Low on-resistance z Fast switching speed z Easily designed drive circuits z Easy to parallel TO--252 MECHANICAL DATA z Case: PDFN5x6 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.016 grams (approximate) z Marking:D90N03 z z z EQUIVALENT CIRCUIT MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Continuous drain current Power dissipation Symbol VDS VGS ID PD RθJA TJ,TSTG Thermal resistance from Junction to ambient Junction and Storage temperature Value 30 ±20V 90 90 18 -55 ~+150 Unit V V A W °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Conditions Off Characteristics V(BR)DSS Drain-Source breakdown voltage VGS=0V, ID=250uA 30 V VDS=30V, VGS=0V Zero gate voltage drain current µA IDSS 1 Gate-body leakage current IGSS ±100 nA VDS=0V, VGS=±20V VDS=20V,ID=250μA Gate-threshold voltage (note 1) VGS(th) 1.6 1 2.5 Drain-source on-resistance (note 1) Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Switching Characteristics Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time RDS(ON) 3.8 5 mΩ VGS=10V, ID=20A 5.5 7 mΩ VGS=4.5V, ID=10A Ciss Coss Crss 2000 320 240 pF pF pF VDS=15V, VGS=0V, f=1MHz td(on) tr td(off) tf 13 36 42 16 nS nS nS nS VDD=15V. VGS =10V,ID =30A Rg=3Ω Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% . © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/5 HKTD90N03 MOSFET (N-CHANNEL) Typical Characteristics © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 2/5 HKTD90N03 MOSFET (N-CHANNEL) Typical Characteristics © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/5 HKTD90N03 MOSFET (N-CHANNEL) UTLINE DIMENSIONS DIMENSION TO-252 PACKAGE OUTLINE Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V Φ Dim mensionsIn Millimeters Min n. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286TYP 4.327 4.727 1.778REF 0.762REF 9.800 10.400 2.9REF 1.400 1.700 4.830REF 1.100 1.300 Dimen ensionsIn Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090TYP 0.170 0.186 0.070REF 0.018REF 0.386 0.409 0.114REF 0.055 0.067 0.190REF 0.043 0.051 TO-252 SUGGESTED UGGESTED PAD LAYOUT Note: 1. Controlling dimension: in millimeters 2. General tolerance: ±0.05mm 0.05mm 3. The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/5 HKTD90N03 MOSFET (N-CHANNEL) TO-252 TAPE AND REEL TO-252 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W TO-252 6.90 10.50 2.70 Ø1.55 1.75 7.50 4.00 8.00 2.00 16.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 TO-252 Tape Leader and Trailer TO-252 REEL DIMENSIONS ARE IN MILLIMETER REEL OPTION 13’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø330.00 100.00 Φ21.00 R151.00 R56.00 R6.50 16.40 21.00 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 5/5