IRFL024NTRPBF-VB

IRFL024NTRPBF www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 0.076 at VGS = 10 V 60 • Halogen-free ID (A)a RDS(on) (Ω) Qg (Typ.) 4.5 0.085 at VGS = 4.5 V • TrenchFET® Power MOSFET RoHS 10 nC 3.5 COMPLIANT APPLICATIONS • Load Switches for Portable Devices D SOT-223-3 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature)e, f ID IDM IS PD TJ, Tstg Limit 60 ± 20 Unit V 4.5 3.2 a 2.7 2.3 20 3.2 2.1b, c 4.0 3.0 2.5b, c 1.6b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Typical t≤5s RthJA 40 50 Maximum Junction-to-Ambienta, c, d °C/W RthJF 15 20 Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 °C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. 服务热线：400-655-8788 1 IRFL024NTRPBF www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS /TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 25 mV/°C - 4.0 1.0 2.5 V ± 100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V µA A 30 VGS = 10 V , ID = 4.0 A 0.076 VGS = 4.5 V, ID = 3.0 A 0.085 VDS = 10 V, ID = 4.0 A 45 Ω S b Dynamic Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 810 Ciss Rg VDS = 30V , VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 4.0 A VDS = 30 V, VGS = 4.5 V, ID = 3.0 A td(off) pF 22 33 10 15 2.5 f = 1 MHz VDD =30V, , RL = 1.5 Ω ID ≅ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω Ω 2.4 15 25 10 15 35 55 tf 12 20 td(on) 10 15 tr td(off) nC 1.7 td(on) tr 120 100 VDD = 30V , RL = 1.5 Ω ID ≅ 4.0 A, VGEN = 10 V, Rg = 1 Ω tf 12 20 25 40 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 7.2 TC = 25 °C 30 IS = 4.0 A, VGS = 0 V IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 20 40 ns 10 20 nC 10 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRFL024NTRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VGS =10thru 5 V TC = - 55 °C 8 I D - Drain Current (A) I D - Drain Current (A) 10 8 VGS = 4V 6 6 TC = 125 °C 4 4 2 TC = 25 °C VGS =2.5 V 0 0.0 0.5 1.0 1.5 VGS = 3.5 V 2.0 2.5 0 0.0 3.0 0.5 1.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.014 0.013 Ciss 800 0.012 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 0.011 0.010 VGS = 4 . 5 V 0.009 0.008 600 400 Coss 200 VGS = 1 0 V 0.007 Crss 0 0 0 6 12 18 24 0 30 15 45 60 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.6 ID = 6.3 A ID = 6.3 A 8 VGS = 4.5 V, 10 V VDS = 10 V 6 VDS = 16 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 30 1.2 1.0 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 IRFL024NTRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.050 100 ID = 4.0 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.040 TJ = 25 °C 10 1 0.0 0.030 TJ = 125 °C 0.020 TJ = 25 °C 0.010 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 4 5 On-Resistance vs. Gate-to-Source Voltage 1.4 50 40 ID = 250 µA Power (W) 1.2 V GS(th) (V) 3 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.0 0.8 30 20 10 0.6 0.4 - 50 2 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 10 10 µs Limited by RDS(on)* I D - Drain Current (A) 100 µs 1 ms 1 10 ms 100 ms, DC 0.1 TC = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Power, Junction-to-Case 服务热线：400-655-8788 4 IRFL024NTRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 18 8 15 Power (W) ID - Drain Current (A) 6 12 9 Package Limited 4 6 2 3 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 IRFL024NTRPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 ffecti 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 IRFL024NTRPBF www.VBsemi.com SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 服务热线：400-655-8788 7 IRFL024NTRPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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