HY3708B

HY3708P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features • 80V/170A RDS(ON) = 3.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • G G D D S S TO-220FB-3L Lead Free and Green Devices Available G S D TO-220FB-3S TO-263-2L (RoHS Compliant) G G TO-3PS-3L Applications  D D S S TO-3PM-3S Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information P HY3708 Package Code M HY3708 YYXXXJWW G YYXXXJWW G PS HY3708 PM HY3708 YYXXXJWW G YYXXXJWW G B HY3708 P : TO-220FB-3L B: TO-263-2L PM: TO-3PM-3S YYXXXJWW G Date Code YYXXX WW M : TO-220FB-3S PS: TO-3PS-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY3708P/M/B/PS/PM Absolute Maximum Ratings Symbol Rating Parameter Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 170 A TC=25°C 660** A TC=25°C 170 TC=100°C 114 TC=25°C 288 TC=100°C 144 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case 0.52 RJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH mJ 1168*** Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=64V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY3708 Min. Typ. Max. 80 - - - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250A VDS=80V, VGS=0V TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2.0 3.0 4.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=85A - 3.8 5.0 m ISD=85 A, VGS=0V - 0.8 1.2 V - 30 - ns - 52 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=85A, dlSD/dt=100A/s 2 V1.0 HY3708P/M/B/PS/PM Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY3708 Min. Typ. Max. - 1.8 - - 6109 - - 995 - - 530 - - 28 - - 18 - - 42 - - 54 - - 152 - - 25 - - 53 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=40V, R G=6 , I DS =85A, V GS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=64V, VGS=10V, IDS=85A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com 3 V1.0 HY3708P/M/B/PS/PM Typical Operating Characteristics Drain Current Power Dissipation 350 180 160 ID - Drain Current (A) Ptot - Power (W) 300 250 200 150 100 50 limited by package 140 120 100 80 60 40 20 o TC=25 C,VG=10V o TC=25 C 0 0 20 40 0 60 80 100 120 140 160 180 200 0 Tc - Case Temperature (°C) 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Safe Operation Area it 100us ds ( on )L im 100 1ms R ID - Drain Current (A) 1000 10 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 300 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com 4 V1.0 HY3708P/M/B/PS/PM Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 240 6.0 210 RDS(ON) - On - Resistance (mΩ) VGS= 5.5,6,7,8,9,10V ID - Drain Current (A) 180 5V 150 120 4.5V 90 4V 60 30 0 0.0 1.0 2.0 3.0 4.0 5.0 5.5 5.0 4.0 3.5 3.0 2.5 6.0 VGS=10V 4.5 0 40 VDS - Drain - Source Voltage (V) 80 120 160 200 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 14 IDS=85A 1.6 IDS =250A Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 12 10 8 6 4 2 0 1.4 1.2 1.0 0.8 0.6 0.4 3 4 5 6 7 8 9 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.hymexa.com 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 5 V1.0 HY3708P/M/B/PS/PM Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 200 2.4 100 IDS = 85A 2.0 o 1.8 IS - Source Current (A) Normalized On Resistance 2.2 VGS = 10V 1.6 1.4 1.2 1.0 0.8 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 3.8m 0 25 50 0.1 0.0 75 100 125 150 175 0.8 1.0 1.2 Gate Charge VGS - Gate-source Voltage (V) 9000 7500 Ciss 6000 4500 3000 Coss Crss 8 16 VDS= 64V IDS= 85A 8 7 6 5 4 3 2 1 24 32 0 40 VDS - Drain - Source Voltage (V) www.hymexa.com 1.4 10 9 0 0.6 Capacitance 10500 0 0.4 VSD - Source - Drain Voltage (V) Frequency=1MHz 1500 0.2 Tj - Junction Temperature (°C) 12000 C - Capacitance (pF) Tj=175 C 0 32 64 96 128 160 QG - Gate Charge (nC) 6 V1.0 HY3708P/M/B/PS/PM Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.0 HY3708P/M/B/PS/PM 'HYLFH3HU8QLW 3DFNDJH7\SH 8QLW 4XDQWLW\ 72)%/ 7XEH  3DFNDJH,QIRUPDWLRQ 72)%/ &20021',0(16,216 6