HY1906P/B
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
60V / 120 A ,
RDS(ON)= 6.0 m (typ.) @ VGS=10V
•
Avalanche Rated
•
•
Reliable and Rugged
Lead Free and Green Devices Available
G
(RoHS Compliant)
G
D
D
S
S
TO-220FB-3L
TO-263-2L
Applications
Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and Marking Information
P
HY1906
B
HY1906
YYXXXJWW G
YYXXXJWW G
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
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HY1906P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
120
A
TC=25°C
380**
A
TC=25°C
120
TC=100°C
80
TC=25°C
188
TC=100°C
94
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RJC
Thermal Resistance-Junction to Case
0.8
RJA
Thermal Resistance-Junction to Ambient
62.5
A
W
°C/W
Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
mJ
600***
L=0.5mH
Note: *
Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=48V
Electrical Characteristics
Symbol
Parameter
(TC = 25C Unless Otherwise Noted)
Test Conditions
HY1906
Min.
Typ.
Max.
60
-
-
-
-
1
-
-
10
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)*
VGS=0V, IDS=250A
VDS=60V, VGS=0V
TJ=85°C
V
A
Gate Threshold Voltage
VDS=VGS, IDS=250A
2
3
4
V
Gate Leakage Current
VGS=±25V, VDS=0V
-
-
±100
nA
Drain-Source On-state Resistance
VGS=10V, IDS=60A
-
6.0
7.5
m
ISD=60A, VGS=0V
-
0.8
1.2
V
-
50
-
ns
-
95
-
nC
Diode Characteristics
VSD*
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=60A, dlSD/dt=100A/s
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HY1906P/B
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=30V, R G = 6 ,
IDS=60A, VGS =10V,
Turn-off Fall Time
Gate Charge Characteristics
Qg
Test Conditions
HY1906
Min.
Typ.
Max.
-
1.0
-
-
4577
-
-
876
-
-
276
-
-
13
26
-
11
20
-
40
66
-
60
95
-
96
-
-
21
-
-
23
-
Unit
b
RG
Tf
(TC = 25C Unless Otherwise Noted)
pF
ns
b
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=60A
nC
Note * : Pulse test ; pulse width 300s, duty cycle2%.
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V1.0
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HY1906P/B
Typical Operating Characteristics
Power Dissipation
Drain Current
120
ID - Drain Current (A)
240
Ptot - Power (W)
200
160
120
80
limited by package
100
80
60
40
40
o
0
o
TC=25 C
0
20
40
20
60
80 100 120 140 160 180 200
Tc - Case Temperature (°C)
TC=25 C,VG=10V
0
20 40
Safe Operation Area
60
80 100 120 140 160 180 200
Tc - Case Temperature (°C)
Lim
it
ID - Drain Current (A)
600
100us
Rd
s(o
n)
100
1ms
10ms
10
DC
1
o
TC=25 C
0.1
0.01
1
10
100
400
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Normalized Effective Transient
10
Duty = 0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single
Mounted on minimum pad
o
RJA : 62.5 C/W
0.001
0.0001
0.001
0.1
0.01
1
10
Square Wave Pulse Duration (sec)
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HY1906P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
160
8.0
VGS= 7,8,9,10V
7.5
120
RDS(ON) - On - Resistance (m)
ID - Drain Current (A)
140
6V
100
80
5.5V
60
5V
40
20
0
4.5V
7.0
VGS=10V
6.5
6.0
5.5
5.0
4.5
4.0
3.5
4V
0
1
2
3
4
3.0
5
0
20
40
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
Normalized Threshold Vlotage
RDS(ON) - On - Resistance (m)
9
8
7
6
5
5
6
7
8
9
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
10
VGS - Gate - Source Voltage (V)
100
IDS =250A
IDS=60A
4
80
VDS - Drain-Source Voltage (V)
10
4
60
0
25
50
75 100 125 150 175
Tj - Junction Temperature (°C)
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HY1906P/B
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
170
2.4
VGS = 10V
2.2
100
IDS = 60A
1.8
IS - Source Current (A)
Normalized On Resistance
2.0
1.6
1.4
1.2
1.0
0.8
o
Tj=25 C
1
0.6
0.4
o
0.2
-50 -25
RON@Tj=25 C: 6.0m
0
25
50
0.1
0.0
75 100 125 150 175
0.6
0.8
1.0
1.2
Capacitance
Gate Charge
1.4
10
VGS - Gate-source Voltage (V)
8000
7000
6000
Ciss
5000
4000
3000
2000
Coss
IDS= 60A
8
7
6
5
4
3
2
1
Crss
5
VDS= 30V
9
9000
0
0
0.4
VSD - Source-Drain Voltage (V)
Frequency=1MHz
1000
0.2
Tj - Junction Temperature (°C)
10000
C - Capacitance (pF)
o
Tj=175 C
10
10
15
20
25
30
35
0
40
VDS - Drain - Source Voltage (V)
0
12
24
36
48
60
72
84
96
QG - Gate Charge (nC)
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HY1906P/B
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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HY1906P/B
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
Tube
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.25
1.30
1.45
A2
2.20
2.40
2.60
b
0.70
0.80
0.95
b2
1.17
1.27
1.47
c
0.40
0.50
0.65
D
15.10
15.60
16.10
D1
8.80
9.10
9.40
D2
5.50
-
-
E
9.70
10.00
10.30
E3
7.00
-
-
e
2.54 BSC
e1
5.08 BSC
H1
6.25
6.50
6.85
L
12.75
13.50
13.80
L1
-
3.10
3.40
ΦP
3.40
3.60
3.80
Q
2.60
2.80
3.00
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V1.0
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HY1906P/B
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