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HY1906B

HY1906B

  • 厂商:

    HUAYI(华羿微)

  • 封装:

    TO-263(D²Pak)

  • 描述:

    类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):120A;功率(Pd):188W;导通电阻(RDS(on)@Vgs,Id):7.5mΩ@10V,60A;阈值电压(Vgs(th)@Id...

  • 数据手册
  • 价格&库存
HY1906B 数据手册
HY1906P/B N-Channel Enhancement Mode MOSFET Features • Pin Description 60V / 120 A , RDS(ON)= 6.0 m (typ.) @ VGS=10V • Avalanche Rated • • Reliable and Rugged Lead Free and Green Devices Available G (RoHS Compliant) G D D S S TO-220FB-3L TO-263-2L Applications  Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information P HY1906 B HY1906 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HY1906P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 120 A TC=25°C 380** A TC=25°C 120 TC=100°C 80 TC=25°C 188 TC=100°C 94 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case 0.8 RJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed mJ 600*** L=0.5mH Note: * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=48V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY1906 Min. Typ. Max. 60 - - - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250A VDS=60V, VGS=0V TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2 3 4 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=60A - 6.0 7.5 m ISD=60A, VGS=0V - 0.8 1.2 V - 50 - ns - 95 - nC Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=60A, dlSD/dt=100A/s www.hymexa.com V1.0 2 HY1906P/B Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=30V, R G = 6 , IDS=60A, VGS =10V, Turn-off Fall Time Gate Charge Characteristics Qg Test Conditions HY1906 Min. Typ. Max. - 1.0 - - 4577 - - 876 - - 276 - - 13 26 - 11 20 - 40 66 - 60 95 - 96 - - 21 - - 23 - Unit b RG Tf (TC = 25C Unless Otherwise Noted)  pF ns b Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=30V, VGS=10V, IDS=60A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com V1.0 3 HY1906P/B Typical Operating Characteristics Power Dissipation Drain Current 120 ID - Drain Current (A) 240 Ptot - Power (W) 200 160 120 80 limited by package 100 80 60 40 40 o 0 o TC=25 C 0 20 40 20 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) TC=25 C,VG=10V 0 20 40 Safe Operation Area 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Lim it ID - Drain Current (A) 600 100us Rd s(o n) 100 1ms 10ms 10 DC 1 o TC=25 C 0.1 0.01 1 10 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 10 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Mounted on minimum pad o RJA : 62.5 C/W 0.001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com V1.0 4 HY1906P/B Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 8.0 VGS= 7,8,9,10V 7.5 120 RDS(ON) - On - Resistance (m) ID - Drain Current (A) 140 6V 100 80 5.5V 60 5V 40 20 0 4.5V 7.0 VGS=10V 6.5 6.0 5.5 5.0 4.5 4.0 3.5 4V 0 1 2 3 4 3.0 5 0 20 40 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (m) 9 8 7 6 5 5 6 7 8 9 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) 100 IDS =250A IDS=60A 4 80 VDS - Drain-Source Voltage (V) 10 4 60 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) www.hymexa.com V1.0 5 HY1906P/B Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 170 2.4 VGS = 10V 2.2 100 IDS = 60A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 6.0m 0 25 50 0.1 0.0 75 100 125 150 175 0.6 0.8 1.0 1.2 Capacitance Gate Charge 1.4 10 VGS - Gate-source Voltage (V) 8000 7000 6000 Ciss 5000 4000 3000 2000 Coss IDS= 60A 8 7 6 5 4 3 2 1 Crss 5 VDS= 30V 9 9000 0 0 0.4 VSD - Source-Drain Voltage (V) Frequency=1MHz 1000 0.2 Tj - Junction Temperature (°C) 10000 C - Capacitance (pF) o Tj=175 C 10 10 15 20 25 30 35 0 40 VDS - Drain - Source Voltage (V) 0 12 24 36 48 60 72 84 96 QG - Gate Charge (nC) www.hymexa.com V1.0 6 HY1906P/B Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 7 HY1906P/B Device Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 www.hymexa.com V1.0 8 HY1906P/B 'HYLFH3HU8QLW 3DFNDJH7\SH 8QLW 4XDQWLW\ 72/ 7XEH  3DFNDJH,QIRUPDWLRQ 72/ &20021',0(16,216 PP 6
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