B772S

B722S PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications SOT-23 1．BASE 2．EMITTER 3．COLLECTOR Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 3 A Peak Collector Current (t = 10 ms) -ICP 7 A Base Current -IB 0.6 A Total Power Dissipation @ Ta = 25 OC PD 1 W Total Power Dissipation @ Tc = 25 OC PD 10 Tj , Tstg - 65 to + 150 Parameter Operating and Storage Junction Temperature Range W O C Characteristics at Ta = 25 C O Parameter er DC Current Gain at -VCE = 2 V, -IC = 20 mA at -VCE = 2 V, -IC = 1 A Current Gain Group R Q P E Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 1 mA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 1 mA Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Base Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 100 mA, Output Capacitance at -VCB = 10 V, f = 1 MHz REV.08 1 of 3 Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 30 60 100 160 200 - 120 200 320 400 - -ICBO - - 1 µA -IEBO - - 1 µA -V(BR)CBO 40 - - V -V(BR)CEO 30 - - V -V(BR)EBO 5 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 2 V fT - 80 - MHz Cob - 55 - pF B722S Typical�Characteristics IC����——���� VCE -10mA -9mA -8mA -1.75 COLLECTOR CURRENT -5mA -4mA -1.25 -3mA -1.00 -0.75 -2mA -0.00 IB=-1mA -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE -10 Ta=25℃ -100 COLLECTOR CURREMT -1000 IC Ta=25℃ Ta=100 ℃ -100 -3000 β=10 -1 -10 -100 COLLECTOR CURREMT (mA) IC����——��� VBE -3000 (mA) -1000 β=10 -10 500 -1000 IC -3000 (mA) Cob/Cib����——�����VCB/VEB f=1MHz IE=0/IC=0 -1000 C IC (pF) Ta=25 ℃ Cib 100 CAPACITANCE -100 -10 COMMON EMITTER VCE= -2V -1 -3000 -1000 IC VBEsat����——����� IC -2000 Ta=100 ℃ -1 -100 COLLECTOR CURRENT VCE (V) -100 -1 10 -10 -7 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -6 COMMON EMITTER VCE= -2V VCEsat����——����� IC -1000 COLLECTOR CURRENT 100 -0.50 -0.25 -0 -300 -600 -900 -1200 REVERSE VOLTAGE VBE (mV) REV.08 Ta=25℃ DC CURRENT GAIN -6mA -1.50 (mA) Ta=100℃ -7mA IC (A) -2.00 hFE����——����� IC 1000 COMMON EMITTER Ta=25 ℃ hFE -2.25 2 of 3 10 -0.1 Cob -1 REVERSE VOLTAGE -10 V (V) -20 B722S PACKAGE�OUTLINE� Plastic�surface�mounted�package;�3�leads� REV.08 SOT-23 3 of 3