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山东晶导微电子有限公司 MB14S THRU MB120S Jingdao Microelectronics 1A SURFACE MOUNT SCHOTTKY BRIDGE FEATURES: PINNING Reverse Voltage - 40 to 200 V PIN DESCRIPTION 1 Input Pin（~） 2 Input Pin（~） Forward Current - 1 A High Surge Current Capability Designed for Surface Mount Application 3 Output Anode（+） 4 Output Cathode（-） MECHANICAL DATA • Case: MBS • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 100mg / 0.0035oz 3 4 2 1 MBS Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols MB14S MB16S MB18S MB110S MB115S MB120S Units Maximum Repetitive Peak Reverse Voltage V RRM 40 60 80 100 150 200 V Maximum RMS voltage V RMS 28 42 56 70 105 140 V Maximum DC Blocking Voltage V DC 40 60 80 100 150 200 V Parameter Maximum Average Forward Rectified Current at Tc = 100°C Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） Operating Junction Temperature Range Storage Temperature Range I F(AV) 1.0 I FSM VF 40 0.55 30 0.70 0.3 10 IR Cj A 110 A 0.85 0.90 V 0.2 5 0.1 2 mA 80 pF RθJA 100 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm）copper pad. 2016.01 MBS-S-MB14S~MB120S-1A200V Page 1 of 3 山东晶导微电子有限公司 MB14S THRU MB120S Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Case Temperature (°C) 40 20 60 80 100 Percent of Rated Peak Reverse Voltage（%） 500 10 1.0 MB14S MB16S/MB18S MB110S MB115S/MB120S 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 MB16S-MB120S 10 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance MB110S-MB120S 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 10 100 1000 100 10 Number of Cycles at 60Hz 2016.01 MB14S 20 Instaneous Forward Voltage (V) MB14S-MB18S 1 T J =25°C 200 1.8 50 00 Junction Capacitance ( pF) T J =25°C 20 Transient Thermal Impedance（ °C /W） Peak Forward Surage Current (A) Instaneous Forward Current (A) Fig.4 Typical Junction Capacitance 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 MB14S THRU MB120S Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 4 leads MBS A ∠ALL ROUND C a L1 L d HE e D e E MBS mechanical data A C D E HE d e L L1 a max 2.6 0.22 5.0 4.1 7.0 2.7 0.7 1.7 1.1 0.2 min 2.2 0.15 4.5 3.6 6.4 2.3 0.5 1.3 0.5 max 102 8.7 197 161 276 106 28 67 43 min 94 5.9 177 142 252 91 20 51 20 UNIT ∠ mm 7° 8 mil Marking Type number 6.0 236 2.5 100 0.9 35 2.4 94 mm Unit ： (mil) Marking code MB14S MB14S MB16S MB16S MB18S MB18S MB110S MB110S MB115S MB115S MB120S MB120S MBxxS 2016.01 XTH509302A8 Page 3 of 3