找到“65”相关的规格书共28,274个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 65W47DPLX | Molex Incorporated | Conn Power RCP 4Power/2Ground POS ST Panel Mount 6 Terminal 2 Port Watertite® | 获取价格 | ||
| RT-65D | Mean Well (Guangzhou) Electronics Co., Ltd. | 封闭式 AC DC 转换器 3 输出 5V 24V 12V 88 ~ 264 VAC，125 ~ 373 VDC 输入 | 获取价格 | ||
| 65-0103SS | Molex Incorporated | 获取价格 | |||
| M3933--25-65N | Amphenol Corporation | Sma Female To Male Attenuator, 18 Ghz (Nonscreened) / Individual - Bag (Pack Fill Qty: 1) | 获取价格 | ||
| 65W47DPLXGF | Molex Incorporated | FD GFCI DUPLEX WT ASSY L5-15 1 | 获取价格 | ||
| 65BU | TE Connectivity Ltd | TERM BLOCK HOLDING PLUG | 获取价格 | ||
| CRGV2512F6M65 | TE Connectivity Ltd | RES SMD 6.65M OHM 1% 1W 2512 | 获取价格 | ||
| CPF0603B6R65E | TE Connectivity Ltd | 贴片电阻 0603 6.65Ω ±0.1% 1/16W ±25ppm/℃ | 获取价格 | ||
| CPF0805B1K65E | TE Connectivity Ltd | 贴片电阻 0805 1.65KΩ ±0.1% ±25ppm/℃ | 获取价格 | ||
| CPF0603B1K65E | TE Connectivity Ltd | RES 1.65 KOHM 0.1% 1/16W 0603 | 获取价格 | ||
| HFS10N65U | SemiHow Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):9.5A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):980mΩ@10V,4.75A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 | ||
| CI06S65C3 | Guangzhou Tokmas Electronics Co., LTD | 二极管配置:独立式;直流反向耐压(Vr):650V;平均整流电流(Io):19A;正向压降(Vf):1.5V@6A;反向电流(Ir):8uA@650V; | 获取价格 | ||
| 65TS-300H | Hollyland (China) Electronics Technology Corp., Ltd. | 获取价格 | |||
| FHU4N65B | Guangzhou Feihong Semiconductor Co., Ltd. | 获取价格 | |||
| FHP10N65A | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):156W;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| FHF10N65B | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V,5A;阈值电压(Vgs(th)@Id):5V@250uA; | 获取价格 | ||
| CMD65R380Q | Guangdong Field Effect Semiconductor Co., Ltd. | 获取价格 | |||
| CS2N65A4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS2N65FA9 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):27W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| ATM2N65TD | Agertech | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):28W;导通电阻(RDS(on)@Vgs,Id):3.9Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):45nC@10V;输入电容(Ciss@Vds):370pF@25V;反向传输电容(Crss@Vds):9pF@25V;工作温度:-55℃~+150℃@(Tj); | 获取价格 |
