AP02N90I
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Isolation Full Package ▼ Fast Switching Characteristics ▼ RoHS compliant G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
900V 7.2Ω 1.9A
Description
The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits.
G D S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 900 ±30 1.9 1.2 6 34.7 0.28
2
Units V V A A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
36 1.9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 62 Units ℃/W ℃/W
Data & specifications subject to change without notice
200418062-1/4
AP02N90I
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 900 2 -
Typ. 0.8 2 12 2.5 4.7 10 5 18 9 630 40 4
Max. Units 7.2 4 10 100 ±100 20 1000 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VGS=10V, ID=0.85A VDS=VGS, ID=250uA VDS=10V, ID=1.9A VDS=900V, VGS=0V VDS=720V, VGS=0V VGS=±30V ID=1.9A VDS=540V VGS=10V VDD=450V ID=1.9A RG=10Ω,VGS=10V RD=236Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
3
Test Conditions IS=1.9A, VGS=0V IS=1.9A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 360 1.8
Max. Units 1.3 V ns µC
Reverse Recovery Time Reverse Recovery Charge
Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=20mH , RG=25Ω , IAS=1.9A. 3.Pulse width
很抱歉,暂时无法提供与“AP02N90I”相匹配的价格&库存,您可以联系我们找货
免费人工找货