AP02N90J

AP02N90H/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 7.2Ω 1.9A Description S GD The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for lowprofile applications. S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 900 ±30 1.9 1.2 6 62.5 0.5 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 36 1.9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 110 Units ℃/W ℃/W Data & specifications subject to change without notice 200418063-1/4 AP02N90H/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions Min. 900 2 - Typ. 0.8 2 12 2.5 4.7 10 5 18 9 630 40 4 Max. Units 7.2 4 10 100 ±100 20 1000 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=125oC) RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=10V, ID=0.85A VDS=VGS, ID=250uA VDS=10V, ID=1.9A VDS=900V, VGS=0V VDS=720V, VGS=0V VGS=±30V ID=1.9A VDS=540V VGS=10V VDD=450V ID=1.9A RG=10Ω,VGS=10V RD=236Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 3 Test Conditions IS=1.9A, VGS=0V IS=1.9A, VGS=0V, dI/dt=100A/µs Min. - Typ. 360 1.8 Max. Units 1.3 V ns µC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=20mH , RG=25Ω , IAS=1.9A. 3.Pulse width