AP07N70CF-A

AP07N70CF-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 1.2Ω 7A Description AP07N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220FM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220FM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching G D S TO-220FM Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 650 ±30 7 4.4 18 37 0.3 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 140 7 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units ℃/W ℃/W 200705052-1/6 Data & specifications subject to change without notice AP07N70CF-A Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.5 32 8.6 9 17 15 35 18 2075 120 8 Max. Units 1.2 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=3.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=7A VDS=480V VGS=10V VDD=300V ID=7A RG=10Ω,VGS=10V RD=43Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A. 3.Pulse width