AP09N70R-A

AP09N70R-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G DD N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 0.75Ω 9A G SS Description AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ±30 9 5 40 156 1.25 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.8 62 Unit ℃/W ℃/W 200705053-1/6 Data & specifications subject to change without notice AP09N70R-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.5 44 11 12 19 21 56 24 2660 170 10 Max. Units 0.75 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=4.5A VDS=650V, VGS=0V VDS=520V, VGS=0V VGS=±30V ID=9A VDS=480V VGS=10V VDD=300V ID=9A RG=10Ω,VGS=10V RD=34Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=6.8mH , RG=25Ω , IAS=9A. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 9 40 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25℃, IS=9A, VGS=0V 3.Pulse width