AP10N70R

AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated Test ▼ Fast Switching Performance ▼ Simple Drive Requirement ▼ RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.6Ω 10A S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 and TO-262 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D S TO-262(R) G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ± 30 10 6.8 40 174 1.39 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 50 10 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.72 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200519062-1/4 AP10N70R/P-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o o Test Conditions VGS=0V, ID=1.0mA VGS=10V, ID=5.0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10Ω,VGS=10V RD=30Ω VGS=0V VDS=15V f=1.0MHz f=1.0MHz Min. 650 2 5 - Typ. 35.9 8.3 11.5 14.9 19.7 51.7 23.3 630 20 2 Max. Units 0.6 4 10 100 ±100 57 3 V Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 3 1950 3120 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 2 Test Conditions Tj=25℃, IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 640 7460 Max. Units 1.5 V ns nC trr Qrr Notes: Reverse Recovery Time Reverse Recovery Charge 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A. 3.Pulse width