AP10P500N

AP10P500N Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device BVDSS -100V RDS(ON) 0.5Ω ID - 1.2A S ▼ RoHS Compliant & Halogen-Free SOT-23 G Description D AP10P500 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G S The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage +20 V -1.2 A -0.95 A ID@TA=25℃ ID@TA=70℃ 3 Drain Current , VGS @ 10V 3 Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current -4.8 A PD@TA=25℃ Total Power Dissipation 1.38 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 201601281 AP10P500N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -100 - - V VGS=-10V, ID=-1A - - 0.5 Ω VGS=-4.5V, ID=-0.5A - - 0.6 Ω VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-1A - 3.3 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-1A - 10.5 17 nC Qgs Gate-Source Charge VDS=-50V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 2.5 - nC td(on) Turn-on Delay Time VDS=-50V - 7 - ns tr Rise Time ID=-1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 17 - ns tf Fall Time VGS=-10V - 5 - ns Ciss Input Capacitance VGS=0V - 420 670 pF Coss Output Capacitance VDS=-50V - 35 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 25 - pF Min. Typ. . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-1A, VGS=0V, - 37 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 27 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP10P500N 5 10 -10V -7.0V -6.0V -5.0V V G = -4.0V -ID , Drain Current (A) 8 T A = 150 o C 6 4 2 65mΩ 3 2 1 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 400 I D = -0.5A T A =25 o C I D = -1A V GS = -10V 360 . Normalized RDS(ON) 2 380 RDS(ON) (mΩ ) -10V -7.0V -6.0V -5.0V V G = -4.0V 4 -ID , Drain Current (A) T A =25 o C 1.6 1.2 0.8 340 0.4 0 320 2 4 6 8 -100 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 4 I D = -250uA 1.6 T j =150 o C Normalized VGS(th) -IS(A) 3 T j =25 o C 2 1.2 0.8 1 0.4 2.01E+08 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -100 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP10P500N f=1.0MHz 12 800 I D = -1A V DS = -50V 600 65mΩ 8 C (pF) -VGS , Gate to Source Voltage (V) 10 6 C iss 400 4 200 2 C oss C rss 0 0 0 4 8 12 16 1 21 41 Q G , Total Gate Charge (nC) 61 81 101 121 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10 Operation in this area limited by RDS(ON) 100us 1 -ID (A) 1ms 10ms 0.1 . 100ms 1s DC 0.01 T A =25 o C Single Pulse 0.001 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 270℃/W 0.001 0.1 1 10 100 1000 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 1.6 -ID , Drain Current (A) VG QG 1.2 -10V QGS 0.8 QGD 0.4 Charge Q 0 25 50 75 100 125 150 o T A , Ambient Temperature ( C ) Fig 11. Drain Current v.s. Ambient Temperature Fig 12. Gate Charge Waveform 4 AP10P500N 2 2 I D = -1mA PD, Power Dissipation(W) Normalized BVDSS 1.6 1.2 0.8 1.5 1 0.5 0.4 0 0 -100 -50 T 0 j 50 100 0 150 50 , Junction Temperature ( o C) 100 150 o T A , Ambient Temperature( C) Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature 1600 6 T j =25 o C V DS = -10V RDS(ON) (mΩ) 1200 800 . -4.5V V GS = -10V 400 -ID , Drain Current (A) 5 4 3 2 T j =150 o C T j =25 o C 1 o T j = -55 C 0 0 0 2 4 6 8 -I D , Drain Current (A) Fig 15. Typ. Drain-Source on State Resistance 10 0 1 2 3 4 5 6 -V GS , Gate-to-Source Voltage (V) Fig 16. Transfer Characteristics 5 AP10P500N MARKING INFORMATION Part Number : A12 A12SS Date Code : SS SS:2004,2008,2012,2016,2020... SS:2003,2007,2011,2015,2019... SS:2002,2006,2010,2014,2018... SS:2001,2005,2009,2013,2017... . 6