AP1332EU
Advanced Power Electronics Corp.
▼ Simple Gate Drive ▼ Small Package Outline ▼ 2KV ESD Rating(Per MIL-STD-883D)
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
S
20V 600mΩ 600mA
SOT-323 G
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating 20 ±6 600 470 2.5 0.35 0.003 -55 to 150 -55 to 150
Unit V V mA mA A W W/ ℃ ℃ ℃
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 360
Unit ℃/W
Data and specifications subject to change without notice
200712041
AP1332EU
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 21 53 100 125 38 17 12 Max. 600 850 1.2 1 10 ±10 2 60 Unit V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance
VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VDS=VGS, ID=250uA VDS=5V, ID=600mA VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±6V ID=600mA VDS=16V VGS=4.5V VDS=10V ID=600mA RG=3.3Ω,VGS=5V RD=16.7Ω VGS=0V VDS=10V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=300mA, VGS=0V
Min. -
Typ. -
Max. 1.2
Unit V
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width
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