AP1332GEU-HF

AP1332GEU-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge BVDSS 20V ▼ Capable of 2.5V Gate Drive RDS(ON) 0.6Ω ▼ Small Package Outline 3 ID D 600mA S ▼ RoHS Compliant & Halogen-Free SOT-323 G Description AP1332 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D G S Absolute Maximum Ratings@Tj=25.oC(unless otherwise specified) Symbol Parameter Rating Unit VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +8 V 3 ID@TA=25℃ Drain Current , VGS @ 4.5V 600 mA ID@TA=70℃ 3 470 mA Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current 2.5 A PD@TA=25℃ Total Power Dissipation 0.35 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 360 ℃/W 1 201410156 AP1332GEU-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 20 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=600mA - - 0.6 Ω VGS=2.5V, ID=300mA - - 2 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.25 V gfs Forward Transconductance VDS=5V, ID=600mA - 1 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA Qg Total Gate Charge ID=600mA - 1.3 2 nC Qgs Gate-Source Charge VDS=16V - 0.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.5 - nC td(on) Turn-on Delay Time VDS=10V - 21 - ns tr Rise Time ID=600mA - 53 - ns td(off) Turn-off Delay Time RG=3.3Ω - 100 - ns tf Fall Time VGS=5V - 125 - ns Ciss Input Capacitance VGS=0V - 38 60 pF Coss Output Capacitance VDS=10V - 17 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 12 - pF Min. Typ. Max. Unit - - 1.2 V . Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=300mA, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. 3.Surface mounted on FR4 board, t ≦ 10 sec. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP1332GEU-HF 2.5 2.5 5.0V 4.5V 3.5V T A =25 C ID , Drain Current (A) 2.0 o 5.0V 4.5V 3.5V T A = 150 C 2.0 ID , Drain Current (A) o 1.5 2.5V 1.0 V G =2.0V 1.5 2.5V 1.0 V G =2.0V 0.5 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 0.0 2.5 0.5 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 1.8 I D =0.6A V G =4.5V I D = 0.4 A o T A =25 C 1.6 600 . Normalized RDS(ON) RDS(ON) (mΩ) 800 1.4 1.2 1.0 400 0.8 0.6 200 2 3 4 -50 5 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.0 0.8 Normalized VGS(th) 1.5 IS(A) 0.6 T j =150 o C T j =25 o C 0.4 1.0 0.5 0.2 0.0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP1332GEU-HF 10 f=1.0MHz 100 V DS =10V V DS =12V V DS =16V 6 C iss C (pF) VGS , Gate to Source Voltage (V) I D =0.6A 8 4 C oss 2 C rss 0 10 0.0 0.4 0.8 1.2 1.6 2.0 1 2.4 3 5 7 9 11 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 100us ID (A) 1 1ms . 0.1 10ms o T A =25 C Single Pulse 100ms DC Normalized Thermal Response (Rthja) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP1332GEU-HF MARKING INFORMATION Part Number : 2 2SS Date Code : SS SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… . 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-323(SC-70-3L) D Millimeters b E E1 SYMBOLS MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A2 0.80 0.90 1.00 b 0.00 0.20 0.40 C 0.10 0.18 0.25 e e A 0.65 REF D 1.80 2.00 2.20 E1 1.75 2.10 2.45 E 1.15 1.25 1.35 A2 C A1 . 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-U3-G-v01 SOT-323 (SC-70-3L) SOT-323(SC-70-3L) FOOTPRINT： . ADVANCED POWER ELECTRONICS CORP. Draw No. M1-U3-G-v01 1