AP13P15GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-150V 300mΩ -13A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. The through-hole version (AP13P15GJ) is available for low-profile applications.
G G DS
TO-252(H)
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -150 ±20 -13 -8.2 52 96 0.77 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.3 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200810051-1/4
AP13P15GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-1mA
2
Min. -150 -1 -
Typ. -0.1 6 38 5 15 11 21 60 36 220 60 3.5
Max. Units 300 -3 -25 -100 ±100 60 5 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC)
VGS=-10V, ID=-7A VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-150V, VGS=0V VDS=-120V, VGS=0V VGS= ±20V ID=-7A VDS=-120V VGS=-10V VDS=-75V ID=-7A RG=10Ω,VGS=-10V RD=10.7Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
1210 1940
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=-7A, VGS=0V IS=-7A, VGS=0V, dI/dt=-100A/µs
Min. -
Typ. 110 620
Max. Units -1.3 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width
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