AP15N03GP

AP15N03GP Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching ▼ RoHS Compliant G D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID TO-220 30V 80mΩ 15A Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 15 9 50 28 0.22 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 62 Units ℃/W ℃/W Data & specifications subject to change without notice 200722051-1/6 AP15N03GP Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 ` - Typ. 0.037 Max. Units 80 100 3 1 25 ±100 V V/℃ mΩ mΩ V uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.5V, ID=6A 5.4 1.3 3.6 3.6 19.8 13 3.2 260 144 13 VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=8A VDS=24V VGS=5V VDS=15V ID=8A RG=3.3Ω,VGS=10V RD=1.9Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 15 50 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=15A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width