AP15P10GH-HF

AP15P10GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -100V RDS(ON) 230mΩ ID G -15A S Description AP15P10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP15P10GJ) are available for low-profile applications. G G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V -15 A ID@TC=100℃ Drain Current, VGS @ 10V -9.4 A -60 A 96 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 201501125 AP15P10GH/J-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=-1mA -100 - - V VGS=-10V, ID=-6A - - 230 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-9A - 8 - S IDSS Drain-Source Leakage Current VDS=-100V, VGS=0V - - -25 uA Drain-Source Leakage Current (T j=125 C) VDS=-80V, VGS=0V - - -250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-9A - 37 60 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-80V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 15 - nC 2 td(on) Turn-on Delay Time VDS=-50V - 11 - ns tr Rise Time ID=-9A - 25 - ns td(off) Turn-off Delay Time RG=10Ω - 56 - ns tf Fall Time VGS=-10V - 36 - ns Ciss Input Capacitance VGS=0V - 1180 1900 pF Coss Output Capacitance VDS=-25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 3.6 5 Ω Min. Typ. IS=-9A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-9A, VGS=0V, - 95 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 410 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP15P10GH/J-HF 30 30 -10V -10V TC=150oC T C =25 o C -ID , Drain Current (A) -ID , Drain Current (A) -7.0V 20 -5.0V 10 -4.5V -7.0V 20 -5.0V 10 -4.5V V G = - 3 .0V V G = - 3 .0V 0 0 0 5 10 15 20 0 25 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 15 20 25 Fig 2. Typical Output Characteristics 2.4 550 I D = -6 A V G = - 10V I D = -6 A T C =25 ℃ 1.9 Normalized RDS(ON) 450 RDS(ON) (mΩ ) 5 -V DS , Drain-to-Source Voltage (V) 350 1.4 0.9 250 0.4 150 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 10 8 T j =25 o C Normalized VGS(th) -IS(A) T j =150 o C 6 4 1.1 0.7 2 0 0.3 0 0.4 0.8 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP15P10GH/J-HF f=1.0MHz 10 10000 C iss 1000 I D = -9A V DS = -80V 6 C (pF) -VGS , Gate to Source Voltage (V) 8 C oss 4 100 C rss 2 10 0 0 10 20 30 1 40 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthjc) 1 100us 10 -ID (A) 1ms 10ms 100ms DC 1 o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 VG V DS =-5V T j =25 o C -ID , Drain Current (A) 8 T j =150 o C QG -10V 6 QGS QGD 4 2 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP15P10GH/J-HF MARKING INFORMATION TO-251 15P10GJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence TO-252 15P10GH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 Millimeters SYMBOLS D D1 E2 E1 F B2 e MAX A2 2.18 2.30 2.40 A3 0.40 0.50 0.65 B 0.40 0.70 1.00 B1 0.50 0.85 1.20 D 6.00 6.50 6.80 D1 4.80 5.35 5.90 4.00 (ref.) F 2.00 2.63 3.05 F1 0.50 0.85 1.20 E1 5.00 5.70 6.30 E2 0.50 1.10 1.80 e F1 B NOM E3 E3 B1 MIN e 2.3 (ref) C 0.35 0.525 0.70 A1 0.00 － 0.25 B2 － － 1.25 L 0.90 1.34 1.78 . A2 C A1 A3 L 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. Draw No. M1-H3EFIMT-G-v10 TO-252 TO-252 FOOTPRINTΚ 6.8mm 7mm 2mm 4.6mm 3mm . 0.6mm 1.0mm ADVANCED POWER ELECTRONICS CORP.ʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳDraw No. M1-H3EFIMT-G-v10 1