AP15T03H

AP15T03H/J Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 80mΩ 12A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15T03J) is available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 ±20 12 6.4 50 12.5 0.1 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Units ℃/W ℃/W Data & specifications subject to change without notice 200601041 AP15T03H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.02 7 4 1.4 2.4 6 22 11 2.4 280 70 47 1.1 Max. Units 80 100 3 1 25 ±100 7 450 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA VGS=10V, ID=8A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=8A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=8A VDS=24V VGS=4.5V VDS=15V ID=8A RG=3.3Ω,VGS=10V RD=1.88Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=8A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs Min. - Typ. 17 7 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width