AP18N20GH

AP18N20GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics BVDSS RDS(ON) ID D ▼ RoHS Compliant & Halogen-Free 200V 170mΩ 18A G S Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP18N20GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage + 20 V ID@TC=25℃ Drain Current, VGS @ 10V 18 A ID@TC=100℃ Drain Current, VGS @ 10V 9.5 A 60 A 89 W 0.7 W/℃ 2 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation Linear Derating Factor 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice 1 201412185 AP18N20GH/J-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 200 - 0.25 - V V/℃ VGS=10V, ID=8A - - 170 mΩ VGS=0V, ID=250uA Max. Units BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=10A - 9.5 - S IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= + 20V, VDS=0V - - +100 nA ID=10A - 19 30 nC 2 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=160V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC 2 td(on) Turn-on Delay Time VDD=100V - 9 - ns tr Rise Time ID=11A - 21 - ns td(off) Turn-off Delay Time RG=9.1Ω - 25 - ns tf Fall Time VGS=10V - 19 - ns Ciss Input Capacitance VGS=0V - 1065 1700 pF Coss Output Capacitance VDS=25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 3 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω Min. Typ. IS=10A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 180 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1150 - nC Notes: 1.Pulse width limited by Max junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP18N20GH/J-HF 40 30 16V 12V 10V 8.0V V G = 6 .0V o T C =150 C ID , Drain Current (A) o T C =25 C ID , Drain Current (A) 30 16V 12V 10V 8.0V V G = 6 .0V 20 20 10 10 0 0 0 4 8 12 0 16 4 Fig 1. Typical Output Characteristics 12 16 20 Fig 2. Typical Output Characteristics 2.8 600 I D =8A V GS =10V I D =5A T C =25 o C 2.4 Normalized RDS(ON) 520 RDS(ON) (mΩ) 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 440 360 280 2 1.6 1.2 0.8 200 0.4 0 120 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C ) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 14 12 1.3 Normalized VGS(th) IS(A) 10 8 6 T j =150 o C T j =25 o C 1.1 0.9 4 0.7 2 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP18N20GH/J-HF 12 f=1.0MHz 10000 I D =10A V DS =100V V DS =130V V DS =160V 8 Ciss 1000 C (pF) VGS , Gate to Source Voltage (V) 10 6 Coss 100 4 10 2 Crss 0 1 0 6 12 18 24 30 1 11 21 31 41 51 61 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 100us 10 ID (A) 1ms 10ms 100ms 1s DC 1 o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 15 V DS =5V VG T j =25 o C o T j =150 C ID , Drain Current (A) 12 QG 10V 9 QGS QGD 6 3 Charge Q 0 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP18N20GH/J-HF MARKING INFORMATION TO-251 18N20GJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence TO-252 18N20GH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5